Extraction of the Built-in Potential for Organic Solar Cells From Current–Voltage Characteristics

Investigation of the Intrinsic Nature of Organic Semiconductors Using a Metal Contact-Induced Capacitance Study in Organic Metal–Insulator–Semiconductor Capacitors

“…One school of thought strongly believes in the existence of involuntary doping of the organic semiconductor (or polymers) during synthesis or processing. − Another school of thought does not concur with the concept of involuntary doping; rather, it considers that the charge injection from the metal to the semiconductor through a Schottky barrier is the main source of charge within the semiconductor. , Metal–insulator–semiconductor (MIS) capacitors, which are known to be essential diagnostic devices for studying field-effect transistors, can be a model system to understand the metal–insulator interface or the metal–semiconductor interface by analyzing capacitance–voltage ( C – V ) characteristics. ,, The existence of doping is mainly claimed on the basis of the linear part of the ( C –2 – V GB ) curve using the Mott–Schottky relation which is obtained from the standard C – V relation of MIS capacitors where C is the capacitance per unit area of the MIS capacitor, C i is the capacitance per unit area of the gate insulator, ϵ 0 is the permittivity of the free space, ϵ s is the dielectric constant of the semiconductor, V GB is the applied voltage at the gate electrode, V FB is the flat-band voltage, and N a/d is the doping concentration of the semiconductor (“a” denotes the acceptor, and “d” the donor). ,− However, in the case of undoped organic semiconductors, adopting the Mott–Schottky equation has been considered to be erroneous, as reported recently. , A physics-based analytical model to obtain the charge concentration, surface potential, and capacitance of the organic MIS capacitor has been recently demonstrated by our group. , The drift-diffusion of the charge carriers that are injected through the Schottky contact at the metal–semiconductor interface appears to be responsible for the capacitance variation with respect to voltage. A similar trend has also been observed in organic diodes. ,, Nevertheless, the universality of contact-induced charge injection has not yet been validated experimentally. Thus, experimental verification to address the presence/absence of involuntary doping in organic semiconductors is an inevitable issue for the family of organic devices including organic light-emitting diodes, organic solar cells, and organic field-effect transistors, which inspires the present work.…”

“…A similar trend has also been observed in organic diodes. 11,21,22 Nevertheless, the universality of contact-induced charge injection has not yet been validated experimentally. Thus, experimental verification to address the presence/absence of involuntary doping in organic semiconductors is an inevitable issue for the family of organic devices including organic light-emitting diodes, organic solar cells, and organic field-effect transistors, which inspires the present work.…”

Monodentate versus Bidentate Anchoring Groups in Self-Assembling Molecules (SAMs) for Robust p–i–n Perovskite Solar Cells

“…V bi values of the PTAA polymer and SAM molecules were obtained from the dark J–V curves (Figure S11, SI) and are listed in Table . The maximum achievable V OC is limited by V bi , as depicted in Table , and MC-45 has a lower V OC in comparison to MC-54 and MC-55. With a larger V OC value, the driving force of charge separation is expected to be larger .…”

Analysis and Implementation of Robust Metaheuristic Algorithm to Extract Essential Parameters of Solar Cell

“…The main advantage of the proposed method is to fetch the data irrespective of choosing the same from I-V curve, i.e., it does not require any primary guesses and not mandatory to perceive any previous works or information regarding the parameters [33]. Manda et al [34], Portrays that the extraction of built-in potential (Vbi) from the cells can be eliminated by using a physics-based model and an empirical technique based on J-V characteristics [35]. The suggested method has a continuity equation to solve the current-carrying transport.…”