Extraction of Fowler-Nordheim parameters of thin SiO/sub 2/ oxide film including polysilicon gate depletion: validation with an EEPROM memory cell

Silicon quantum dots embedded in a SiO2matrix: From structural study to carrier transport properties

“…(A1)-(A3) we obtain β = 215.6 ± 0.2 MV/cm, well matching the literature values. 84,85 Moreover, by using the direct expressions …”

Impact of stress on Fowler–Nordheim parameters effects on EEPROM threshold voltage

“…According to previous studies [12], four characteristic parameters can be extracted: the oxide thickness T ox , the substrate doping N sub , the flat-band voltage V fb and the polysilicon-gate doping N g . Fig.…”

“…to write mode (respectively erase mode). The model used to extract FN parameters is not restricted to a simple calculation of the electric field E ox but takes into account the surface potential in the substrate W s and the surface potential in the floating gate W p [12]. Thereby, the expression for the electric field E ox is…”

Deterioration of stressed oxides: Application to the prediction of a non-volatile memory cell endurance

“…The goal is to predict the endurance of an EEPROM cell without stressing the cell itself. Quasi-static capacitance measurement [15], performed before any stress, gave tunnel oxide thicknesses, t tun , flatband voltages, V fbd , N 2+ polysilicon dopings, N fg , and N + silicon substrate dopings, N subd , as shown in Table 1.…”

“…where the discrete sum index, V gd, is taken between 7 and 9 V because I FN (V gd ) becomes significant magnitude with respect to its highest value when jV gd j is greater than 7 V. The best fit given by our I FN model [15] is reached when R reaches its minimum as a function of U 0 . We then calculate a and b out of U 0 corresponding to the minimum of R as shown in Fig.…”