Extraction of Effective Oxide Thickness for SOI FINFETs With High- $\kappa$/Metal Gates Using the Body Effect

Abstract

A methodology based on the transistor body effect is used to monitor inversion oxide thicknesses (T inv 's) in high-κ/metal-gate undoped ultrathin-body short-channel SOI FINFETs. The extracted T inv 's are benchmarked to independent capacitance-voltage (C-V ) measurements. For the first time, device simulation is introduced to understand the fundamental difference in T inv values extracted using the two techniques, which is driven by the inversion charge centroid at different bias conditions. Index Terms-Fully depleted SOI (FDSOI), FINFETs, inversion oxide thickness, ultrathin body.

Statistical study of the influence of LER and MGG in SOI MOSFET

“…The study is carried out with our in-house parallel 3D FE DD simulator [8] which includes quantum corrections using the DG approach. The device under study is a fully depleted 25 nm gate length SOI FinFET with a silicon body height of 30 nm and a width of 12 nm [6,9]. Thanks to the use of the FE method, we can describe arbitrary geometries and reproduce a real device design.…”

“…Thanks to the use of the FE method, we can describe arbitrary geometries and reproduce a real device design. The silicon body, oxide layer dimensions, and the shape of channel were accurately modelled following a TEM visualization of the real devices [6,9]. In order to reproduce as closely as possible the experimental data, a spline was used to model the shapes of the oxide and gate structure, see figure 1.…”