Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs

Balanethiram, Suresh; D'Esposito, Rosario; Chakravorty, Anjan; Fregonèse, Sébastien; Zimmer, Thomas

doi:10.1109/ted.2016.2645615

Cited by 12 publications

(14 citation statements)

References 10 publications

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“…The rise in junction temperature ( T j ) above the ambient temperature ( T amb ) for a given transistor because of self‐heating is expressed as follows:

T_{j} = T_{amb} + P_{diss} R_{TH},

where P diss is the power dissipation of the transistor. R TH represents the parallel combination of the thermal resistances of the FEOL and BEOL components:

\frac{1}{R_{italicTH}} = \frac{1}{R_{TH, s}} + \frac{1}{R_{TH, m}},

…”

Section: Methods With Beolmentioning

confidence: 99%

“…

R_{italicTH, s} = \int_{0}^{b} \frac{dz}{k_{s} ((), T) A_{s} ((), x, y, z)},

R_{italicTH, m} = \int_{0}^{‐ t} \frac{‐ italicdz}{k_{m} ((), T) A_{m} ((), x, y, z)},

where b denotes the distance from the heat source to the substrate, and t signifies the distance from the heat source to the top of the metal layer. A s ( x,y,z ) ( A m ( x,y,z )) is the position‐dependent heat flow area, which increases along the z direction in the semiconductor (metal) . k s and k m are the thermal conductivity of semiconductors and metals, respectively.…”

Section: Methods With Beolmentioning

confidence: 99%

“…Before that, we need to be able to accurately estimate the thermal characteristics of the device. There are many methods [4][5][6][7][8][9][10][11][12][13][14] for measuring the self-heating phenomenon.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, a particularly interesting work reported in the study of Chakravorty et al attempted to extract overall thermal resistance by analytic method without any Iteration but resulted into a complex equation, in which R TH,m (back end of line [BEOL] thermal resistance) is not extracted. These shortcomings led to the work reported in the study of Balanethiram et al, where a complicated technique to find the relative contributions of BEOL and FEOL (front end of line) on thermal resistance is proposed. The work of Balanethiram et al presented a closed form solution but does not proposed a new method to solve the problem with R TH,m .…”

Section: Introductionmentioning

confidence: 99%

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An approach for determining thermal resistance model parameters of SiGe HBT

Wang

Zhang

et al. 2019

Int J Numerical Modelling

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This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.KEYWORDS analytic method, back end of line (BEOL), silicon germanium heterojunction bipolar transistors, thermal resistance

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“…The rise in junction temperature ( T j ) above the ambient temperature ( T amb ) for a given transistor because of self‐heating is expressed as follows:

T_{j} = T_{amb} + P_{diss} R_{TH},

where P diss is the power dissipation of the transistor. R TH represents the parallel combination of the thermal resistances of the FEOL and BEOL components:

\frac{1}{R_{italicTH}} = \frac{1}{R_{TH, s}} + \frac{1}{R_{TH, m}},

…”

Section: Methods With Beolmentioning

confidence: 99%

“…

R_{italicTH, s} = \int_{0}^{b} \frac{dz}{k_{s} ((), T) A_{s} ((), x, y, z)},

R_{italicTH, m} = \int_{0}^{‐ t} \frac{‐ italicdz}{k_{m} ((), T) A_{m} ((), x, y, z)},

Section: Methods With Beolmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An approach for determining thermal resistance model parameters of SiGe HBT

Wang

Zhang

et al. 2019

Int J Numerical Modelling

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show abstract

“…The back-end-of-line is also modeled through a thermal resistance RTH_BEOL which is calculated using the extracted thermal resistance RTH and the calculated front-end-of-line thermal resistance RTH_FEOL [14] as following:…”

Section: Back-end-of Line Heat Diffusionmentioning

confidence: 99%

Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges

Couret

Fischer

Fregonèse

et al. 2019

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)

Self Cite

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A thermal impedance model of single-finger and multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented. The heat flow analysis through the device has to be considered in two diffusion parts: the front-end-of-line (FEOL) diffusion and the back-end-of-line (BEOL) diffusion. Therefore, this new thermal impedance model features multi-poles network which has been incorporated in HiCuM L2 compact model. The HiCuM compact model simulation results are compared with on-wafer low-frequency S-parameters measurements at room temperature highlighting the device frequency dependence of self-heating mechanism. The simulation results are also compared to pulse measurements to improve reliability analysis.

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