Articles you may be interested inSiCl4/Cl2 plasmas: A new chemistry to etch high-k materials selectively to Si-based materials J. Vac. Sci. Technol. A 30, 020602 (2012); 10.1116/1.3679551 Effect of gas mixing ratio on etch behavior of Zr O 2 thin films in B Cl 3 ∕ He inductively coupled plasma J. Vac. Sci. Technol. A 26, 344 (2008); 10.1116/1.2891255
Reactive ion beam etching of Hf O 2 film and removal of sidewall redepositionThe authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature ͑T s ͒ at several source powers. Activation energies range from 0.2 to 1.0 kcal/ mol for HfO 2 and from 0.8 to 1.8 kcal/ mol for Si, with little or no dependence on source power ͑20-200 W͒. These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B͑1s͒ feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B͑1s͒ features were observed for poly-Si surfaces at 187.6 eV ͑B bound to Si͒, 189.8 eV, and 193 eV ͑both ascribed to BO x Cl y ͒. In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B͑1s͒ peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl.