2009
DOI: 10.1002/ppap.200900005
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Modeling and Simulation of Fast Neutral Beam Sources for Materials Processing

Abstract: Fast (kinetic energy of 10 to some 100 eV) neutral beams can be used for etching, deposition or surface modification, without charging damage that may occur in conventional plasma processing of materials. This paper provides an overview of the modeling and simulation approaches applicable to neutral beam sources. Neutral beam sources based on both volume and surface neutralization of ions are discussed, with emphasis on the latter.

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Cited by 8 publications
(4 citation statements)
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References 63 publications
(60 reference statements)
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“…Etching of high aspect ratio patterns with plasmas is susceptible to sidewall charging. In order to avoid the aforementioned problems related to the presence of charge and (V)UV radiation, etching with energetic neutral beams (NB) has been proposed for nanometre-scale device fabrication [1][2][3][4][5][6][7][8]. Different approaches used for energetic neutral beam generation include laser detonation [1] as well as surface [2,9] and volume [10] neutralization of ion beams.…”
Section: Introductionmentioning
confidence: 99%
“…Etching of high aspect ratio patterns with plasmas is susceptible to sidewall charging. In order to avoid the aforementioned problems related to the presence of charge and (V)UV radiation, etching with energetic neutral beams (NB) has been proposed for nanometre-scale device fabrication [1][2][3][4][5][6][7][8]. Different approaches used for energetic neutral beam generation include laser detonation [1] as well as surface [2,9] and volume [10] neutralization of ion beams.…”
Section: Introductionmentioning
confidence: 99%
“…The latter can be achieved either by pulsed plasmas [ 64 , 65 ], which can produce and inject negative ions into the valleys, or by DC-augmented capacitive coupled plasmas [ 53 , 66 ], which can produce and inject narrow angle and high energy electrons into the valleys. An alternative to eliminate surface charging is by neutral beam etching [ 67 , 68 , 69 ].…”
Section: Discussionmentioning
confidence: 99%
“…However, for the second case for a pressure 300 mbar, the deviations between the two models were 20% in the bulk region, while they were around 30% in the wall region. Several works on low pressure plasmas (less than 100 mbar) use the thermal nonequilibrium models (Ye et al, Johannes et al, Panagopoulos et al, and Economou). In the present work, the gas pressure is 1000 mbar.…”
Section: Experimental Setup and Measurementsmentioning
confidence: 99%