Extraction and modelling of self-heating and mutual thermal coupling impedance of bipolar transistors

Nenadovic,; Mijalkovic,; Nanver,; Vandamme,; Schellevis,; d'Alessandro,; Slotboom,

doi:10.1109/bipol.2003.1274950

Cited by 4 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The electrical parameters of the model (1) were extracted from isothermal (pulsed) characteristics of single-finger devices with an emitter area of 20xl gi2, while RTH, and RTH, have been measured on two-finger test structures with an emitter area of 2x(20xl) im2 using the lock-in measurement technique proposed in [15]. All the measurements are performed on a Cascade probing station equipped with a temperature-controlled chuck, an HP4156B parameter analyzer, and an Agilent 85124A pulse-measurement system.…”

Section: (A)mentioning

confidence: 99%

FEAT - A Simulation Tool for Electrothermal Analysis of Multifinger Bipolar Transistors

Spina

Nenadovic

d’Alessandro³

et al. 2005

EUROCON 2005 - The International Conference on "Computer as a Tool"

View full text Add to dashboard Cite

In this paper, we present a new simulation tool, which can be effectively adopted for the electrothermal analysis of multifinger bipolar transistors. The program is based on an optimized procedure for solving the nonlinear system of equations governing the electrothermal device behavior. Features like model accuracy, short computation time, flexibility, and user friendliness make the proposed software a good candidate for optimizing both reliability and performance of modern transistors with complex layouts.

show abstract

Section: (A)mentioning

confidence: 99%