Extracting the temperature dependence of thermal resistance from temperature-controlled DC measurements of sige HBTs

Balanethiram, Suresh; D'Esposito, Rosario; Fregonèse, Sébastien; Zimmer, Thomas; Berkner, J.; Céli, D.

doi:10.1109/bctm.2017.8112919

Cited by 16 publications

(20 citation statements)

References 9 publications

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“…S INCE direct measurement of thermal resistance (R T H ) or the operating temperature is not possible in bipolar transistors, researchers attempted to extract R T H [1]- [3] and its temperature dependence [4]- [7] from electrical measurements using the base-emitter voltage (V BE ) as a thermometer. In our recent extraction work [8], we demonstrated the superior accuracy of our approach over the existing state-of-the-art R T H extraction techniques with the help of compact model simulations. However, as pointed out in [8], such extraction methods can be verified only by simulations.…”

Section: Introductionmentioning

confidence: 88%

“…In our recent extraction work [8], we demonstrated the superior accuracy of our approach over the existing state-of-the-art R T H extraction techniques with the help of compact model simulations. However, as pointed out in [8], such extraction methods can be verified only by simulations. Apparently, accuracy level based on compact model simulations serves as a benchmark to substantiate the R T H obtained from measurements.…”

Section: Introductionmentioning

confidence: 88%

“…Z T H (ω) can be extracted directly from Y −parameters measurement, in particular from Y 22 since it is most affected 9for devices with different emitter geometries corresponding to STMicroelectronics B55 technology [12]. R T H used in (9) is obtained following [8].…”

Section: Extraction Of Thermal Impedancementioning

confidence: 99%

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Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs

Balanethiram

D'Esposito

Fregonèse

et al. 2019

IEEE Trans. Electron Devices

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In this paper, we present a straightforward methodology to validate the consistency of thermal resistance (RT H) measurements for a set of stripe geometry silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The proposed approach is based on the behavior of frequency-dependent thermal impedance (ZT H) of HBTs. The key advantage of this method is its simplicity and ease of applicability because it requires no additional measurements than the conventional approaches to extract the electrothermal parameters. First we provide a physics based formulation to extract ZT H as a function of RT H. As a next step, we propose different normalization methods for ZT H in stripe emitter SiGe HBTs to validate the RT H used in our ZT H formulation. Finally, we substantiate our validation technique across stripe emitter SiGe HBTs having different emitter dimensions corresponding to STMicroelectronics B55 technology.

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Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 88%

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Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs

Balanethiram

D'Esposito

Fregonèse

et al. 2019

IEEE Trans. Electron Devices

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“…The entire thermal resistance RTH is extracted using the intersection technique [15] whereas the FEOL thermal resistance RTH_FEOL corresponds to the combination of subsection thermal resistance RTHi divided by the associated number of fingers NX:…”

Section: Back-end-of Line Heat Diffusionmentioning

confidence: 99%

“…From an analysis point of view, only Y12 and Y22 parameters are presented since they are the most sensitive to self-heating effects [15]. The DC bias point was chosen to exhibit self-heating effects with enough accuracy, basically with large base-emitter voltage VBE.…”

Section: A Low-frequency S-parameters Measurementsmentioning

confidence: 99%

Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges

Couret

Fischer

Fregonèse

et al. 2019

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)

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A thermal impedance model of single-finger and multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented. The heat flow analysis through the device has to be considered in two diffusion parts: the front-end-of-line (FEOL) diffusion and the back-end-of-line (BEOL) diffusion. Therefore, this new thermal impedance model features multi-poles network which has been incorporated in HiCuM L2 compact model. The HiCuM compact model simulation results are compared with on-wafer low-frequency S-parameters measurements at room temperature highlighting the device frequency dependence of self-heating mechanism. The simulation results are also compared to pulse measurements to improve reliability analysis.

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Electrothermal Characterization, TCAD Simulations, and Physical Modeling of Advanced SiGe HBTs

2019

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Extracting the temperature dependence of thermal resistance from temperature-controlled DC measurements of sige HBTs

Cited by 16 publications

References 9 publications

Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs

Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs

Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges

Electrothermal Characterization, TCAD Simulations, and Physical Modeling of Advanced SiGe HBTs

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