Externally linear integrators

Tsividis, Y.

doi:10.1109/82.718584

Cited by 9 publications

(4 citation statements)

References 45 publications

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“…Their configurations and parameters have been derived in literature [2,6,8]. Second order building blocks like LPFs, BPFs or High Q BPFs can be built using these blocks.…”

Section: Multiple-input Integratormentioning

confidence: 99%

Modular analysis and design of log-domain circuits based on LIN↔ELIN transformations

Feştilă

Groza

Cirlugea

et al. 2006

Analog Integr Circ Sig Process

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We systematized and developed some procedures for the modular design of externally-linear internally nonlinear (ELIN) circuits resulting in a general LIN ↔ ELIN transformation procedure. This one was also extended to analysis of these types of circuits. The procedure is exemplified on log-domain circuits. In the design one starts with the linear block diagram (LIN) described by transfer functions and one substitutes directly each linear building block by a corresponding nonlinear one. The parameters of each nonlinear component depend on the given parameters of its linear correspondent. Input F −1 and output F blocks are added. In the analysis one identifies the nonlinear basic circuit components and each of them is substituted by its corresponding linear building block. Input and output F −1 -F cells are removed. The ideal transfer function can be calculated on the linear block diagram now. The LIN ↔ ELIN transformations make a direct connection between equivalent linear and ELIN circuits, simplify their design and analysis procedures and permit the development of CAD procedures.

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“…Their configurations and parameters have been derived in literature [2,6,8]. Second order building blocks like LPFs, BPFs or High Q BPFs can be built using these blocks.…”

Section: Multiple-input Integratormentioning

confidence: 99%

Modular analysis and design of log-domain circuits based on LIN↔ELIN transformations

Feştilă

Groza

Cirlugea

et al. 2006

Analog Integr Circ Sig Process

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“…The motivation stems from the fact that each sinh-domain biquad requires half the amount of capacitors compared with a log-domain biquad. The proposed synthesis method for sinh integrators has been formulated by Tsividis in [28] and [29]. The particular CMOS sinh biquad, transistor-level topology is reported in [30][31][32] and the sizing and biasing parameters in [32] and [33], respectively.…”

Section: Sinh-domain Mos-only Fourth-order One-zero Gammatone Filtermentioning

confidence: 99%

“…The proposed synthesis method for sinh integrators has been formulated by Tsividis in and . The particular CMOS sinh biquad, transistor‐level topology is reported in and the sizing and biasing parameters in and , respectively.…”

Section: Sinh‐domain Mos‐only Fourth‐order One‐zero Gammatone Filtermentioning

confidence: 99%

MOS‐only reduced‐order ELIN cochlear channels: comparative performance evaluation

Houssein

Drakakis

2016

Circuit Theory & Apps

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This paper introduces and applies practical area-reduction techniques on the analogue, externally linear-internally nonlinear (ELIN), complementary metal-oxide semiconductor (CMOS) implementation of a cochlear channel. This channel is constructed on the basis of the biomimetic auditory filter called One-Zero Gammatone Filter (OZGF) and it has been synthesised using ultra-low power, Class-AB, biquadratic filters, which employ MOS transistors that operate in their weak inversion regime. The realisation of linear capacitors with appropriately configured MOS transistors, the order reduction of the OZGF transfer function and the employment of hyperbolic sine companding filters can lead to area reductions that range from 61.8%, up to 91.9% of the original size. Comparative simulation results highlight the trade-offs between performance, linearity, noise and power consumption of the designs.

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“…For completeness, its full transistor‐level realization is shown in Figure . It is a current‐input current‐output ELIN block composed following the method proposed by Tsividis for the synthesis of such integrators. It employs only p‐type devices in its TL (translinear) loops, which favors matching and good logarithmic conformity (by connecting the bulk and source terminals of individual devices).…”

Section: Synthesis Of High‐order Sinh Filtersmentioning

confidence: 99%

A simulation study of high‐order CMOS hyperbolic‐sine filters

Kardoulaki

Glaros

Katsiamis

et al. 2013

Circuit Theory & Apps

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SUMMARY This paper advances the field of externally linear–internally nonlinear (ELIN) filters by introducing a synthesis method that enables the design of high‐order class‐AB sinh filters by means of complementary metal–oxide semiconductor (CMOS) weak‐inversion sinh integrators comprising only one type of devices in their translinear loops. The proposed transistor‐level synthesis approach is demonstrated through the examples of (1) a biquadratic and (2) a fifth‐order filter, and their simulated performance is studied. The biquadratic filter achieves a dynamic range of 94 dB and has a tunable quality factor Q up to the value of 8, whereas its natural frequency can be tuned for four orders of magnitude. Its static power consumption amounts to 6.2 μW for Q = 1 and fo = 2 kHz. The fifth‐order Chebyshev sinh CMOS filter with a cut‐off frequency of 100 Hz, a pass band ripple of 1 dB, and a power consumption of ~300 nW is compared head‐to‐head with its pseudo‐differential class‐AB CMOS log domain counterpart. The sinh filter achieves similar or better signal‐to‐noise ratio (SNR) and signal‐to‐noise‐plus‐distortion ratio (SNDR) performances with half the capacitor area but at the expense of higher power consumption from the same power supply level. All three presented filter topologies are novel. Cadence design framework simulations have been performed using the commercially available 0.35 µm AMS (austriamicrosystems) process parameters. Copyright © 2013 John Wiley & Sons, Ltd.

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Externally linear integrators

Cited by 9 publications

References 45 publications

Modular analysis and design of log-domain circuits based on LIN↔ELIN transformations

Modular analysis and design of log-domain circuits based on LIN↔ELIN transformations

MOS‐only reduced‐order ELIN cochlear channels: comparative performance evaluation

A simulation study of high‐order CMOS hyperbolic‐sine filters

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