MOS‐only reduced‐order ELIN cochlear channels: comparative performance evaluation

Abstract

This paper introduces and applies practical area-reduction techniques on the analogue, externally linear-internally nonlinear (ELIN), complementary metal-oxide semiconductor (CMOS) implementation of a cochlear channel. This channel is constructed on the basis of the biomimetic auditory filter called One-Zero Gammatone Filter (OZGF) and it has been synthesised using ultra-low power, Class-AB, biquadratic filters, which employ MOS transistors that operate in their weak inversion regime. The realisation of linear capacitors with appropriately configured MOS transistors, the order reduction of the OZGF transfer function and the employment of hyperbolic sine companding filters can lead to area reductions that range from 61.8%, up to 91.9% of the original size. Comparative simulation results highlight the trade-offs between performance, linearity, noise and power consumption of the designs.

Systematic Computation of Nonlinear Bilateral Dynamical Systems With a Novel Low-Power Log-Domain Circuit

“…For example, the MOSFET transistors, due to their structures, are only able to conduct current towards a single direction, from drain to source. This structure is helpful for implementing class-AB linear dynamical systems by processing positive and negative components of the input/state variables separately resulting in two capacitors per each state variable of the prototype system [27][28][29][30]. However according to the superposition principle, such a procedure, in general, cannot be applied to nonlinear systems, therefore, it has been challenging to realize nonlinear systems that contain bidirectional state variables.…”

“…Given that increased C values lead to increased area, an optimal design targeting a specific set of dynamics should consider both noise and area constraints. An additional approach to reduce area consumption at the expense of less optimal noise level is the exploitation of MOS-capacitors [38].…”

Sinh-ortam süzgeçlerinin biyomedikal uygulama örneklerinin incelenmesi

“…Tasarım topolojisine göre bu devrelere karekök-ortam devreleri adı verilmiştir. Aktif bölgedeki BJT ya da zayıf evirtim bölgesindeki MOSFET tarafından oluşturulan translineer döngüler tarafından gerçekleştirilen hiperbolik sinüs fonksiyonu ile oluşturulan devrelere ise sinh-ortam devreleri denmektedir [6]- [14], [16]- [17], [19]- [20], [23]- [58]. Sinh-ortam süzgeçleri ilk olarak Frey tarafından 1993'te önerilmiştir [6]…”