External stress-induced chemical reactivity ofO2on Si(001)

Abstract

In the dissociation reaction of O 2 on the Si͑001͒-c͑4 ϫ 2͒ surface, a trapping-mediated reaction is accelerated by external tensile stress. This alteration of the reactivity is more than an order of magnitude greater than estimations based on the alteration of the electronic structure caused by strain of the surface lattice. It was found that on the Si͑001͒-c͑4 ϫ 2͒ surface, the stress destabilized the antiferromagnetic ordering of topmost Si atoms forming buckled dimer and induced the collective phason-flip motion of the dimer. The alteration of the reactivity caused by such a collective instability of the arrangement of surface atoms is discussed.

Адсорбція молекулярного кисню на по-верхню Si1–xGex/Si(001)

“…Ще одним чинником, не врахованим вибраною нами моделлю, є поверхневi напруження, якi збiльшують поглинання O 2 [17] й можуть впливати на взаємодiю молекул O 2 з поверхнею. Аналiз впливу поверхневих напружень на окислення iнтерфейсу Si 1−x Ge x /Si(001) буде проведено в подальших наших роботах.…”

Developments of scanning probe microscopy with stress/strain fields

“…As reported, the energy gap of the bilayer graphene can be controlled by strain. 3 The surface morphology and surface dynamics, such as the surface reconstruction, 4, 5 diffusion and nucleation of adsorbate, 6 and nanostructure growth, 7,8 can also be affected by the surface stress and strain.…”

A Molecular Dynamics Simulation Study on the Initial Stage of Si(001) Oxidation Under Biaxial Strain

“…5 Many researchers focused on the externally applied stress effect on the thermal oxidation of silicon. [6][7][8][9][10][11][12][13][14][15][16] Noma et al found that the biaxial compress strain suppresses the oxidation rate. 6 Yen et al found that the tensile stress strongly enhanced the oxidation rate of silicon.…”

“…of O 2 on the Si(001) surface and the systemic research had provided an insight into the mechanism. [10][11][12] However, in-depth understanding of the oxidation reaction on the strained surface is required for the systematic control of the oxidation behavior.…”