Using a reactive molecular dynamics simulation, the oxidation of Si nanowires (Si-NWs) with diameters of 5, 10, and 20 nm was investigated. The compressive stress at the interface between the oxide and the Si core decreased with increasing curvature in the sub-10 nm regime of the diameter, in contrast to the theory of self-limiting oxidation where rigid mechanical constraint of the Si core was assumed. The Si core of the thinner Si-NW was deformed more with surface oxidation, resulting in a lower compressive stress at the interface. These results explain the experimental observation of full oxidation of very thin Si-NWs. V
Initial stage of oxidation of Si (100) surface by O 2 molecules was investigated in atomic scale by molecular dynamics (MD) simulation at 300 K and 1200 K without external constraint on the oxygen molecules. A reactive force field was used for the simulation to handle charge variation as well as breaking and forming of the chemical bonds associated with the oxidation reaction. Results of the present simulation are in good agreement with previous first principle calculations and experimental observations: the oxygen molecules spontaneously dissociated on the Si (100) surface and reacted with Si first layer without energy barrier. The simulation also exhibited that the reacted oxygen preferentially located in the back bonds of the surface dimer. Consecutive oxidation simulation with 300 O 2 molecules showed that the diffusion of oxygen atom into the subsurface of clean Si surface can occur during very short time of the present oxidation simulation. The present MD simulation also revealed that the oxidation at 300 K results in more stoichiometric oxide layer than that at 1200 K. V
We have investigated the initial stage of oxidation of Si (001) surface by water (H2O) molecules using reactive molecular dynamics (MD) simulation at 300 K and 1200 K without any external constraint on the water molecules. Previously, reported water reaction behaviors on silicon surface by ab initio calculations or experimental observations were reproduced by the present MD simulation. The present simulation further revealed that the hydrogen atom in H2O is more attractive than oxygen atom in O2 to bond with Si, such that it accelerates the dissociation process of H2O. It was also observed that the oxidation reaction was enhanced with increased number of the supplied water molecules. It was suggested that the repulsion between water molecules and their fragments facilitates the dissociation of both water molecules and hydroxyl decomposition on the Si surface. Therefore, the wet oxidation behavior appeared to have more temperature dependence even in the early stage of oxidation.
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