Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 Å materials

Craig, Adam; Jain, Manish; Meriggi, Laura; Cann, T.; Niblett, A.; Collins, Xiao; Marshall, Andrew

doi:10.1063/1.5054753

Cited by 4 publications

(2 citation statements)

References 17 publications

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“…Both temperature dependencies are described comparably in the relevant publications, e.g., ref. [27]. eSWIR SPAD characteristics under optical illumination are pending.…”

Section: Ingaassb/gasb Eswir Spadsmentioning

confidence: 99%

Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

Rutz,

Passow,

Wörl

et al. 2024

Advanced Photon Counting Techniques XVIII

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Quantum sensing and quantum communication systems rely on high-performance single-or entangled-photon sources and single-photon detectors enabling experiments based on the quantum nature of single photons. In this contribution, we discuss the development of an entangled-photon source delivering entangled photon pairs with wavelengths of about 1550 nm alongside with single-photon avalanche detectors (SPADs) for the short-wave infrared (SWIR) and for the extended SWIR (eSWIR) spectral range.The fabrication processes of such quantum-enabling technologies is highlighted. The entangled-photon source is based on AlGaAs Bragg-reflection waveguides. Very low difference in effective refractive index of TE and TM polarized photons -important for high polarization entanglement without external compensation -as well as high single and coincidence count rates were achieved. For the fabrication of InGaAs/InP SWIR SPADs, the key technology is the planar process technology via zinc diffusion to produce spatially confined p-type regions. For the zinc-diffusion process, a novel method of selective epitaxial overgrowth was developed, achieving the intended double-well diffusion profile. Experimental data of thus fabricated InGaAs/InP SPADs show the expected dark-current, photo-current, and multiplication-gain characteristics in linear-mode operation as well as breakthrough behavior in Geiger-mode operation at 240 K, which is a typical operating temperature for InGaAs/InP SPADs achievable by thermoelectric cooling. GaSb-based SPADs for the eSWIR are fabricated in a mesa approach showing the expected dark current behavior as well. All three different devices are linked by enabling quantum technologies in the (e)SWIR as well as by using our III/V-semiconductor technology facilities.

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“…Both temperature dependencies are described comparably in the relevant publications, e.g., ref. [27]. eSWIR SPAD characteristics under optical illumination are pending.…”

Section: Ingaassb/gasb Eswir Spadsmentioning

confidence: 99%

Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

Rutz,

Passow,

Wörl

et al. 2024

Advanced Photon Counting Techniques XVIII

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show abstract

“…Especially for the SWIR band, APDs have several potential applications, including optical communication, quantum information, range-finding, coherent sensing, medical diagnostics, analytical apparatus, vehicle light detection and ranging (LIDAR), life science, etc. ( Figure 1 ) [ 7 , 8 , 9 , 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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Direct mapping and characterization of the surface local field in InGaAs/InP avalanche photodetectors

Zhang

et al. 2022

Infrared Physics & Technology

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Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 Å materials

Cited by 4 publications

References 17 publications

Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Direct mapping and characterization of the surface local field in InGaAs/InP avalanche photodetectors

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