Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

Zimbone, Massimo; Sarikov, Andrey; Bongiorno, Corrado; Marzegalli, Anna; Scuderi, Viviana; Calabretta, Cristiano; Miglio, Leo; Via, Francesco La

doi:10.1016/j.actamat.2021.116915

Cited by 32 publications

(24 citation statements)

References 41 publications

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“…The difference in thermal expansion coefficient and lattice parameters between Si and SiC leads to the formation of dislocations at the hetero-interface and the presence of a local strain field within the epilayer [15]. The presence of residual stress (depending on doping concentration [21]) can drive the formation of perfect and partial dislocations (PDs) in the epilayer.…”

Section: Resultsmentioning

confidence: 99%

“…Although 3C-SiC material for semiconductor applications has been investigated for 30 years, the problem of defect formation at the 3C-SiC/Si contact is still far from being solved. Stacking faults (SFs), partial dislocations (PDs) and anti-phase boundaries (APB) or inverted domain boundaries (IDB) are the most important defects [15]. In particular, IDBs are the main defects responsible for the electrical failure of 3C-SiC/Si-based devices [16,17].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

et al. 2021

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This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si (100) substrate with different 4° off-axis in a horizontal hot-wall chemical vapor deposition (CVD) reactor. The Si substrate was melted inside the CVD chamber, followed by the growth process. Micro-Raman, photoluminescence (PL) and stacking fault evaluation through molten KOH etching were performed on different doped samples. Then, the role of the doping and of the cut angle on the quality, density and length distribution of the stacking faults was studied, in order to estimate the influence of N and Al incorporation on the morphological and optical properties of the material. In particular, for both types of doping, it was observed that as the dopant concentration increased, the average length of the stacking faults (SFs) increased and their density decreased.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

et al. 2021

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“…3C-SiC inclusions that can arise during epilayer growth on hexagonal polytypes are relatively wellcharacterized and straightforward to minimize via step-flow growth on the substrate vicinal surface [32,33] or promote if heteroepitaxy is desired [34,35]. Still, 3C-SiC materials contain large densities of SFs and other dislocations [36,37]. Overall, these observations emphasize the need to clarify the synthesis pathways toward polytypic heterostructures.…”

Section: Introductionmentioning

confidence: 95%

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Harmon

Delegan

Highland

et al. 2022

Mater. Quantum. Technol.

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Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

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“…A trapezoidal SF and partial dislocations are clearly visualized by the TEM image while the HAADF-STEM images show three kind of SFs observed in 3C-SiC. These SFs consist of 1, 2, or 3 faulted atomic layers, indicated by the yellow arrows [43]. Though TEM is a useful defect inspection tool, it can only provide one cross-sectional view at a time, so it takes a lot of time if one needs to inspect whole SiC wafer.…”

Section: Transmission Electron Microscopy (Tem)mentioning

confidence: 99%

“…4 Different defect inspection methods and obtained images of defects. a TEM and HAADF image of SF [43]. bOptical micrograph image after KOH etching [45].…”

Section: Scanning Electron Microscopy (Sem)mentioning

confidence: 99%

Defect Inspection Techniques in SiC

et al. 2022

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With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

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Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

Cited by 32 publications

References 41 publications

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Defect Inspection Techniques in SiC

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