Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography

The crystallization of amorphous germanium telluride (GeTe) thin films is controlled with nanoscale resolution using the heat from a thermal AFM probe. The dramatic differences between the amorphous and crystalline GeTe phases yield embedded nanoscale features with strong topographic, electronic, and optical contrast. The flexibility of scanning probe lithography enables the width and depth of the features, as well as the extent of their crystallization, to be controlled by varying probe temperature and write speed. Together, these technologies suggest a new approach to nanoelectronic and opto-electronic device fabrication.

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Nanopatterning of GeTe phase change films via heated-probe lithography

Podpirka

Lee

Ziegler

et al. 2017

Nanoscale

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Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography

Cited by 1 publication

References 29 publications

Nanopatterning of GeTe phase change films via heated-probe lithography

Nanopatterning of GeTe phase change films via heated-probe lithography

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