Abstract:A bstract Implantation-induced microstructural modi®cations have been measured in amorphous GaAs using Raman scattering spectroscopy and optical absorption in the subgap region. Additional evidence is given that the amorphous phase consists of two components which continuously evolve as a function of ion dose. A characteristic disorder-related Urbach parameter from the absorption measurements was used as a measure of the total disorder at each dose, whereas Raman results enabled the separation of a random comp… Show more
“…where E u is the Urbach's energy, described as the width of the tails of localized states, and was associated with the amorphous state [42]. As shown in Fig.…”
“…where E u is the Urbach's energy, described as the width of the tails of localized states, and was associated with the amorphous state [42]. As shown in Fig.…”
“…The Urbach's tail is generally attributed to the disorder in the material [14]. According to Robertson and O'Reilly [15] fluctuation of Urbach's energy in amorphous carbon may be because of two types of disorders:…”
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