Influence of disorder on the optical absorption in semiconductors: Application to epitaxially grown III-V compounds

Dziatkowski, K.; Cywiński, Łukasz; Bardyszewski, W.; Twardowski, A.; Saito, H.; Ando, Koji

doi:10.1103/physrevb.73.235340

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2008

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“…16,17 This strong "band tailing" is believed to be due to defect states present in the gap, such as As Ga antisites and Mn interstitials, and k-selection rule breaking by disorder. 18,19 As shown in Fig. 1 (left), the MIR pump with 140 fs pulse duration was tuned to 0.62 eV, exciting the valence band in two distinct ways.…”

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confidence: 99%

Femtosecond demagnetization and hot-hole relaxation in ferromagneticGa1−xMnxAs

et al. 2008

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We have studied ultrafast photoinduced demagnetization in GaMnAs via two-color time-resolved magneto-optical Kerr spectroscopy. Below-bandgap midinfrared pump pulses strongly excite the valence band, while near-infrared probe pulses reveal sub-picosecond demagnetization that is followed by an ultrafast (∼1 ps) partial recovery of the Kerr signal. Through comparison with InMnAs, we attribute the signal recovery to an ultrafast energy relaxation of holes. We propose that the dynamical polarization of holes through p-d scattering is the source of the observed probe signal. These results support the physical picture of femtosecond demagnetization proposed earlier for InMnAs, identifying the critical roles of both energy and spin relaxation of hot holes.

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