Exploring Burstein–Moss type effects in nickel doped hematite dendrite nanostructures for enhanced photo-electrochemical water splitting

Gahlawat, Soniya; Singh, Jaspreet; Yadav, Ashok K.; Ingole, Pravin P.

doi:10.1039/c9cp04132j

Cited by 86 publications

(34 citation statements)

References 56 publications

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“…For Al:ZnO films, band gap variation is usually associated with the carrier concentration. When the carrier concentration exceeds the Mott critical density (~10 19 cm −3 for ZnO-based films), the Burstein-Moss band filling effect occurs to increase the band gap and the increment is proportional to the N e 2/3 [47,48]. This linear relationship is observed in the annealing temperatures of 300-500 • C in the present work.…”

Section: Resultssupporting

confidence: 64%

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Hsu

Geng

et al. 2020

Molecules

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In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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Section: Resultssupporting

confidence: 64%

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Hsu

Geng

et al. 2020

Molecules

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“…This abnormal phenomenon can be understood from the Burstein-Moss effect, an interesting property in many heavy doped 3D semiconductor. [49][50][51] Briefly, in the case of Re doping MoS 2 , the lower states of the conduction band will be occupied by the electrons from the Re atoms, leading to the E F move into the conduction band. In this case, the electron needs additional energy to promote from valence band to empty state in the conduction band.…”

Section: Resultsmentioning

confidence: 99%

Strong Band Bowing Effects and Distinctive Optoelectronic Properties of 2H and 1T′ Phase‐Tunable Mo_xRe_1–_xS₂ Alloys

Deng

et al. 2020

Adv Funct Materials

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Structure and energy band engineering of 2D materials via selective doping or phase modulation provide a significant opportunity to design them for optoelectronic devices. Here, the synthesis of high-quality Mo x Re 1-x S 2 alloys with tunable composition and phase structure via chemical vapor deposition growth is reported, and their novel energy band structures and optoelectronic properties are explored. The phase separation and structure reconstruction, which are found to be two serious problems in the synthesis of these alloys, are successfully suppressed through tuning their growth thermodynamics. As a result, the obtained Mo x Re 1-x S 2 alloys have uniform composition, phase structure, and crystal orientation. Together with X-ray photoelectron spectroscopy analysis and first-principle calculation, the Re/Mo doping-induced Fermi level up-shift/down-shift, new electronic states, and "sub-gap" formation in Mo x Re 1-x S 2 alloys are revealed. Especially, a strong band bowing effect is discovered in the Mo x Re 1-x S 2 alloys with structure transition between 1T′ and 2H phases. Furthermore, these alloys reveal tunable conduction behavior from n-type to bipolar and p-type in 1T′ phase, as well as novel "bipolar-like" electron conduction behavior in 2H alloys. The results highlight the unique alloying effects, which do not exist in the single-phase 2D alloys, and provide the feasibility for potential applications in building novel electronic and optoelectronic devices.

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“…The population of CB increases with the increase in the Ni concentration and hence results in a higher energy shift due to the Burstein-Moss effect and, finally, at 11% Ni concentration, the Ni x Fe 2Àx O 3 nanocomposite exhibits better photoelectrochemical performance. 215 Fig. 36 shows that the CB population becomes dense with an increase in the dopant concentration.…”

Section: Dopingmentioning

confidence: 97%

Recent insights into SnO₂-based engineered nanoparticles for sustainable H₂generation and remediation of pesticides

et al. 2022

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Exploring Burstein–Moss type effects in nickel doped hematite dendrite nanostructures for enhanced photo-electrochemical water splitting

Abstract: The Burstein–Moss suggests which that the optical band gap of degenerately doped semiconductors increases when all states close to the conduction band get populated is important to obtain different optical properties for the same material.

Cited by 86 publications

References 56 publications

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Strong Band Bowing Effects and Distinctive Optoelectronic Properties of 2H and 1T′ Phase‐Tunable Mo_xRe_1–_xS₂ Alloys

Recent insights into SnO₂-based engineered nanoparticles for sustainable H₂generation and remediation of pesticides

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Exploring Burstein–Moss type effects in nickel doped hematite dendrite nanostructures for enhanced photo-electrochemical water splitting

Abstract: The Burstein–Moss suggests which that the optical band gap of degenerately doped semiconductors increases when all states close to the conduction band get populated is important to obtain different optical properties for the same material.

Cited by 86 publications

References 56 publications

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Strong Band Bowing Effects and Distinctive Optoelectronic Properties of 2H and 1T′ Phase‐Tunable MoxRe1–xS2 Alloys

Recent insights into SnO2-based engineered nanoparticles for sustainable H2generation and remediation of pesticides

Contact Info

Product

Resources

About

Strong Band Bowing Effects and Distinctive Optoelectronic Properties of 2H and 1T′ Phase‐Tunable Mo_xRe_1–_xS₂ Alloys

Recent insights into SnO₂-based engineered nanoparticles for sustainable H₂generation and remediation of pesticides