Experiments on the plasma assisted chemical vapor deposition of copper

Abstract

Low resistivity (≈2.2–3.0 μΩ cm), high purity copper films have been deposited by the hydrogen plasma assisted chemical vapor deposition of copper(II) hexafluoroacetylacetonate, Cu(Hfa)2, at pressures of 1.0–3.0 Torr, substrate temperatures of 160–240 °C, plasma powers of 3.0–15.0 W and precursor mole fractions of 0.25%–0.8%. The film purity and morphology have been analyzed by X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffraction. Under the conditions investigated, the film growth rates were measured to be in the range of 40.0–200.0 Å/min. The experiments suggest that the deposition rate, precursor conversion, film purity and morphology can be tailored by adjusting the operating conditions appropriately. Our results have been used in conjunction with a reactor model of plasma assisted chemical vapor deposition to suggest operating conditions for high copper growth rates and high purity.

Surface Kinetics Model for SiLK Chemical Mechanical Polishing

“…29 L-H kinetics has also been used to model the growth and etching of germanium, copper, and silicon dioxide films by CVD. [30][31][32][33][34] In typical heterogeneous catalysis, gasphase molecules travel to a catalytic surface and become bound to catalyst surface sites. Neighboring molecules react, forming products on the catalyst surface, after which the products desorb to leave behind a vacant catalytic site.…”

Modeling of the Kinetics in Copper Chemical Vapor Deposition from Cu(hfac)VTMS

“…During the past decade, the interest in copper as a next generation material for metallic interconnects has increased. − Up to now, aluminum has been generally used for interconnects in electronic microdevices, but modern requirements are better met by copper. The latter, which shows excellent electrical conductivity and a high electromigration resistance, has been the subject of much research. − …”