Experiments on scaling and variable range hopping in the integral quantum Hall effect

Yoo, K.-H.; Kwon, Hyuk‐Chan; Park, J.C.

doi:10.1016/0038-1098(94)90320-4

Cited by 8 publications

(5 citation statements)

References 13 publications

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“…However, in sharp contrast to the short range alloy potential scattering in InGaAs/InP samples 61 , classical and most studied AlGaAs/GaAs heterostructure has long range Coulomb scattering on remote (by a spacer) ionized impurities which results in nonuniversality of the temperature exponent κ (see both the early [66][67][68][69] and the recent works 51,52,[70][71][72][73][74] ).…”

Section: B Large-scale Random Potentialmentioning

confidence: 99%

“…Here is a table of experimental results for critical exponent (κ) values extracted from the temperature dependences of the PPT width in modulation-doped GaAs/AlGaAs heterostructures 51,52,62,[66][67][68][69][70][71][72][73][74] . In the Table II the following abbreviations for a method of determination of the critical exponent from the experimental data on the Hall, ρ xy , and the longitudinal, ρ xx , resistivities are used.…”

Section: Appendixmentioning

confidence: 99%

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Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Gudina,

Arapov,

Neverov

et al. 2017

Preprint

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We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Estimations for the degree of the carrier localization length divergence reveal a decisive role of the long-range random potential (the potential of remote ionized impurities) in the localization-delocalization processes in the QH regime for the system under study.

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Section: B Large-scale Random Potentialmentioning

confidence: 99%

Section: Appendixmentioning

confidence: 99%

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Gudina,

Arapov,

Neverov

et al. 2017

Preprint

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“…However, in sharp contrast to the short range alloy potential scattering in InGaAs/InP samples [10], the most perfect and the most studied AlGaAs/GaAs heterostructure has long range Coulomb scattering on remote (by a spacer) ionized impurities which results in nonuniversality of the temperature exponent κ (see both the early [16][17][18][19] and the recent works [20][21][22][23][24][25][26]).…”

Section: Large-scale Random Potentialmentioning

confidence: 99%

“…Here is a table of experimental results for critical exponent κ values extracted from the temperature dependences of QHE plateau-plateau transition (PPT) width in modulation-doped GaAs/AlGaA heterostructures [11,[16][17][18][19][20][21][22][23][24][25][26].…”

Section: Appendixmentioning

confidence: 99%

Scaling laws under quantum Hall effect for a smooth disorder potential

Gudina

Клепикова

Neverov

et al. 2019

Low Temperature Physics

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We carried out the analysis of discovered experimental values of the critical parameter κ for the quantum Hall plateau-plateau transitions in modulation-doped GaAs/AlGaAs heterostructures. It turned out that these values are in the main concentrated at the range of 0.5-0.7. We argue that within the theoretical concepts for the largescale disorder potential, it corresponds to a borderland between quantum tunnelling processes and classical percolation regime. Just, the critical exponent value for the bandwidth of delocalized states, κ = 0.54 ± 0.01, obtained by us for HgTe-based heterostructure with inverted band spectrum, can be associated with a smooth character of impurity potential in our system.

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“…Значения κ при T > 2 K, определенные в настоящем исследовании, хорошо согласуются со значениями, получаемыми на системах с крупномасштабным случайным потенциалом [6,7,11,15,28,29,33,35,36,[40][41][42][43][44]. В частности, во множестве работ для наиболее изученной структуры GaAs/AlGaAs регулярно наблюдаются κ = 0.5−0.75.…”

Section: влияние крупномасштабного случайного потенциалаunclassified

Неуниверсальное скейлинговое поведение ширины пиков проводимости в режиме квантового эффекта Холла в структурах InGaAs/InAlAs

Гудина¹,

Арапов²,

Ильченко³

et al. 2018

Физика И Техника Полупроводников

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Проведено исследование продольного ρxx и холловского ρxy сопротивлений в области квантовых фазовых переходов в режиме квантового эффекта Холла в магнитных полях до 12 Тл при температурах T = 0.4−30 K в двумерных электронных системах n-In 0.9 Ga 0.1 Аs/In 0.81 Al 0.19 As. Обнаружено неуниверсальное скейлинговое поведение температурной зависимости ширины пиков сопротивления ρxx , связанное с влиянием крупномасштабного случайного потенциала и смешиванием уровней Ландау с разными направлениями спина.

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Experiments on scaling and variable range hopping in the integral quantum Hall effect

Cited by 8 publications

References 13 publications

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Scaling laws under quantum Hall effect for a smooth disorder potential

Неуниверсальное скейлинговое поведение ширины пиков проводимости в режиме квантового эффекта Холла в структурах InGaAs/InAlAs

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