Experiments on 10Gb/s Fast Settling High Sensitivity Burst-Mode Receiver with On-Chip Auto-Reset for 10G-GPONs

Abstract

This paper reports performance tests on a DC-coupled 10Gb/s burst-mode receiver with on-chip reset, designed for 10G-GPONs. Record short 2R settling time, high sensitivity and large loud/soft ratio is demonstrated in burst-mode operations at 2.5G/5G/10Gb/s.

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

“…6(a). The TIA is implemented in 0.13µm SiGe BiCMOS technology and has a differential output [17,18]. It is designed for burst-mode operation in access networks with an input referred RMS noise current lower than 1.2µA.…”

Low-voltage waveguide Ge APD based high sensitivity 10Gb/s Si photonic receiver

“…5(a), to assess the sensitivity. The TIA, implemented in 0.13µm SiGe BiCMOS technology, has a differential output [2]. A 10Gb/s (2 31 -1) long optical NRZ PRBS data pattern with 8.9dB extinction ratio, as shown in the inset of Fig.…”

“…A 7dB sensitivity improvement with absolute sensitivity of -22dBm was estimated based on the Q factor extracted from eye diagram measurements. In this paper, a Ge WG APD with a similar design as that in [1] is wire-bonded to a 0.13µm SiGe BiCMOS low-noise TIA [2]. Bit error ratio (BER) measurements were implemented on the wire-bonded optical receiver to directly assess the sensitivity.…”

Quaternary TDM-PAM as upgrade path of access PON beyond 10Gb/s

“…The 10 Gbit/s burst-mode trans-impedance amplifier (BM-TIA), presented in [6], incorporates a fast automatic gain control (AGC) and a gain-locking function. The APD multiplication factor M was set to 9 and the overload was found to be higher than −5 dBm, but higher input levels are avoided to avoid damaging the APD.…”