2018
DOI: 10.1016/j.microrel.2018.07.072
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Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules

Abstract: The ability to monitor temperature variations during the actual operation of power modules is key to reliability investigations and the development of lifetime prediction strategies. This paper proposes an original solution, specifically devised with novel fast-switching silicon carbide (SiC) power MOSFETs in mind. The results show ability to track temperature variations resulting from active power cycling of the devices, including high speed transients, thus enabling to discriminate among different potential … Show more

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Cited by 8 publications
(5 citation statements)
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“…It has been expected due to the previous literature findings such as [17]. The quite good correlation between the average temperature detected by infrared camera and the indirect temperature estimated by TSEP has been aligned with other literature results for single SiC power MOSFET device [18] and IGBT power modules, also considering the behavior of two paralleled dies [19].…”
Section: Thermo-camera Validationsupporting
confidence: 88%
“…It has been expected due to the previous literature findings such as [17]. The quite good correlation between the average temperature detected by infrared camera and the indirect temperature estimated by TSEP has been aligned with other literature results for single SiC power MOSFET device [18] and IGBT power modules, also considering the behavior of two paralleled dies [19].…”
Section: Thermo-camera Validationsupporting
confidence: 88%
“…The same technique was previously validated on a proof-ofconcept prototype based on an H-Bridge SiC MOSFET power module where the temperature of one of the switches was estimated using the same temperature estimator shown in this paper [30]. The H-bridge validation test rig presented in [30] is shown in Fig. 20.…”
Section: E Goodness Of the Resultsmentioning
confidence: 99%
“…Another approach for validation would use less invasive optical fibres that allow only a punctual measurement of temperature to be performed. However, the temperature gradient across the die of a semiconductor during its working operations can reach tens of degrees as shown in [30], [31]. An indirect form of validation is provided in Fig.…”
Section: E Goodness Of the Resultsmentioning
confidence: 99%
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“…The soft-switching HF converter operation is experimentally validated in an actual 25 kW, [31] (800 V of DC bus) SiC MOSFETs-based DC-DC full-bridge converter, devoted to the first stage of an isolated charger circuit [32]. The simplified schematic of the power converter is reported in Figure 17a.…”
Section: A Case Of Studymentioning
confidence: 99%