Experimental Validation of the Drain Current Analytical Model of the Fully Depleted Diamond SOI nMOSFETs by Using Paired T-test Statistical Evaluation

Abstract

The focus of this work is to validate the drain current analytical model of the Fully Depleted Diamond SOI nMOSFETs, by applying the paired t-test statistical evaluation with experimental data of the six different samples of integrated circuits containing different Diamond SOI MOSFETs and Conventional ones counterparts. Two parameters are considered in this work: maximum transconductance and saturation drain current. We observe that, for the most cases (worst case is around 85% of the repeatability for the saturation drain current), the Diamond drain current analytical model is capable to reproduce a similar statistical behavior than the one observed for the conventional SOI nMOSFET counterpart, considering the same bias conditions and SOI CMOS manufacturing process of the integrated circuits.

Zero Temperature Coefficient behavior for Ellipsoidal MOSFET

“…These three effects (LCE, PAMDLE and DEPAMBBRE) are able to improve the electrical performance of EM. We also observed that EM not presents corners in its active structure, so this geometry is able to increase the tolerance of the rupture voltage (BVDS) and the Electrostatic Discharge (ESD) [14,15].…”

“…Analyzing the model drain current equations IDSEM (12) and ( 13) [19], for ellipsoidal MOSFETs [7] with 0° < β < 90°a nd 90° < β <180° respectively, we can see that there is a correction factor applied to the drain current of the conventional MOSFETs IDSCM, due to longitudinal corner effect (LCE) and The Parallel connection of MOSFETs with Different channel Lengths Effect (PAMDLE). (12) (13) This factor will be called "Correction Factor" and represented by: FCH for transistors with 0° < β < 90° and FCV for transistors with 90° < β <180°, according to (14) and (15). ))]…”

Estudo dos MOSFETs com estilo de leiaute do tipo elipsoidal

“…Particularmente, MOSFETs GAA com secção transversal elíptica foram relatadas, devido ao processo de litografia e oxidação (BANGSARUNTIP at al., 2009;NG at al., 2009 PERUZZI et al, 2012;FINO et al, 2013;CORREIA et al, 2014…”

“…Fonte: Autor Legenda: Curvas experimentais das IDS em função de VGT dos EMs e dos seus CMs equivalentes, considerando-se um VDS=0,3V para W/L=3 (a), W/L=2,4 (b), W/L=1,5 (c), W/L=0,8 (d) e W/L=0,6 (e), e um VDS=0,5V para W/L=0,8 (f) e W/L=0,6 (g) (PERUZZI, et al, 2012;FINO, et al, 2013;CORREIA, et al, 2014).…”