Experimental validation of mechanical stress models by micro-Raman spectroscopy

Wolf, Ingrid De; Pozzat, G.; Pinardl, K.; Howard, David; Ignat, M.; Jain, S.C.; Maes, H.E.

doi:10.1016/0026-2714(96)00190-4

Cited by 28 publications

(17 citation statements)

References 5 publications

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“…We showed that in several cases ͑Ge, InAs, and GaP͒ the anti-Stokes signal can be enhanced by using resonant effects, i.e. by picking up appropriate pairs of lines for a given material ͑see Table I͒. The method should be useful in micro-Raman studies of strain in silicon microstructures 5,6 ͑see Fig. 5͒ for the determination of the phonon deformation potentials from uniaxial or biaxial experiments ͑Figs.…”

Section: Discussionmentioning

confidence: 99%

“…For instance, Raman spectroscopy has been used as a tool for the characterization of strained-layer heterostructures 1-4 or for the determination of strain in silicon integrated circuits. 5,6 In these cases it is important to know the values of the phonon frequencies in the unstrained case and to determine their small variations. Also, determination of the phonon deformation potentials from uniaxial measurements requires an accuracy of about 0.1 cm Ϫ1 .…”

Section: Introductionmentioning

confidence: 99%

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High accuracy Raman measurements using the Stokes and anti-Stokes lines

Trzeciakowski

Martı́nez-Pastor

Cantarero

1997

Journal of Applied Physics

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We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applied biaxial strain, laser power, and temperature.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High accuracy Raman measurements using the Stokes and anti-Stokes lines

Trzeciakowski

Martı́nez-Pastor

Cantarero

1997

Journal of Applied Physics

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“…This procedure of fitting theoretical stress models to Raman data can be used for any model describing a device where Raman data can be measured. This way, RS can be used to experimentally verify stress models [De Wolf et al (1996c)]. …”

Section: Si 3 N 4 Linesmentioning

confidence: 99%

Mechanical stress measurements using micro-Raman spectroscopy

Wolf

Maes

1998

Microsystem Technologies

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“…[6][7][8] At the same time, micro-Raman technique was used to measure stress distribution in LOCOS structures. [3][4][5] These developments renewed interest in the study of LOCOS structures.…”

Section: Introductionmentioning

confidence: 97%

“…The stripe width in LOCOS structures decreased 2-5 m. [3][4][5] The stress distribution became highly nonuniform and the problems caused by the edge-induced stresses became more serious. Hu's theory 1,2 of edge-induced stresses in the substrates worked reasonably well with wider stripes but gave erroneous results for narrow stripes.…”

Section: Introductionmentioning

confidence: 98%

A method to interpret micro-Raman experiments made to measure nonuniform stresses: Application to local oxidation of silicon structures

Pinardi

Jain

Willander

et al. 1998

Journal of Applied Physics

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A method is described to calculate the Raman spectrum from a nonuniformly strained sample taking into account the effects that arise due to finite depth of penetration and diameter of the laser beam. Both the parallel and the focused beams are considered. The case of stress in a Si substrate decaying monotonically with depth z (rapidly near the interface and slowly at larger depths) is considered in detail. The predicted Raman shifts are found to be sensitive to both the distribution of stress and to the absorption coefficient α for the laser light wavelength used. It is found that light scattered from distances much larger than 1/α still contribute significantly to the observed Raman spectrum. The observed shift in the peak of the spectrum does not correspond to the stress close to the interface. If the stress decays more rapidly than the light intensity, the Raman line that originates from the unstrained lower part of the substrate dominates. For transparent material (α=0) and unfocused beam the Raman spectrum consists of only the unstrained Si line; the contribution to Raman line from the strained interface region is completely masked. For measurements of stresses near the interface short wavelength light with an absorption depth of 5–10 nm is recommended. The calculated and observed Raman shifts in a local oxidation of silicon (a processing technique for isolation) with polysilicon buffer between the nitride stripe and the Si substrate are compared. The agreement between the calculated and the observed Raman shifts is very good. The salient points of our approach which enabled us to obtain this agreement are: We took into account the effects of laser beam width, penetration depth, and focusing; we included the stresses in the polysilicon layer and near the polysilicon/silicon interface, and we included contributions from large depths.

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Experimental validation of mechanical stress models by micro-Raman spectroscopy

Cited by 28 publications

References 5 publications

High accuracy Raman measurements using the Stokes and anti-Stokes lines

High accuracy Raman measurements using the Stokes and anti-Stokes lines

Mechanical stress measurements using micro-Raman spectroscopy

A method to interpret micro-Raman experiments made to measure nonuniform stresses: Application to local oxidation of silicon structures

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