2003
DOI: 10.1021/jp022524m
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Experimental Thermochemistry of the SiCl and SiBr Radicals; Enthalpies of Formation of Species in the Si−Cl and Si−Br Systems

Abstract: Gaseous reaction equilibria involving the radical species SiCl and SiBr were studied by mass spectrometric monitoring of the molecular beam issuing from a heated effusion cell source, and the results were used to derive the enthalpies of formation ∆ f H°2 98 (SiCl,g) ) 36.8 kcal mol -1 and ∆ f H°2 98 (SiBr,g) ) 48.7 kcal mol -1 , along with the dissociation energies D°0(SiCl) ) 98.9 kcal mol -1 and D°0(SiBr) ) 84.7 kcal mol -1 , all (2 kcal mol -1 . Thermochemical data were also obtained for the species SiCl 2… Show more

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Cited by 27 publications
(17 citation statements)
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References 22 publications
(64 reference statements)
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“…Another ion-chemistry study by Murthy and Beauchamp measured the enthalpy difference between SiH 2 Cl + , SiHCl 2 + , and SiCl 3 + [45,46]. Large discrepancy exists between experiments for these radicals and cations, e.g., f H • 298 K (SiCl 3 ) of −334.7 ± 8.4, −390.4 ± 16.7, and ≥−351.5 ± 8.4 kJ/mol have been reported by Walsh [27], JANAF-1985 [26], and Hilderbrand et al [28].…”
Section: Introductionmentioning
confidence: 91%
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“…Another ion-chemistry study by Murthy and Beauchamp measured the enthalpy difference between SiH 2 Cl + , SiHCl 2 + , and SiCl 3 + [45,46]. Large discrepancy exists between experiments for these radicals and cations, e.g., f H • 298 K (SiCl 3 ) of −334.7 ± 8.4, −390.4 ± 16.7, and ≥−351.5 ± 8.4 kJ/mol have been reported by Walsh [27], JANAF-1985 [26], and Hilderbrand et al [28].…”
Section: Introductionmentioning
confidence: 91%
“…The corrected values for SiH 4 and Si 2 H 6 were adopted in photoionization study on SiH x [31] and in a large number of theoretical studies on the thermochemistry of silicon hydrides [98][99][100][101][102] where they were taken as reference for calibrating the theory and setting up the correction parameters. However, Feller and Dixon [59] [27]; e From G3 atomization energies [55]; f BAC-MP4 calculation, using 34.3 ± 2.1 kJ/mol for the enthalpy of formation of SiH4, for silicon hydrides and chlorinated compounds [48], and fluorinated compounds [47]; g Fluorinated silanes at MP4/6-31G(d,p) level using isodesmic reactions [49]; h MP4/6-31++G(2d,2p) with isodesmic reactions based on experimental SiHn and SiF4 [17]; i Chlorinated compounds at MP4/6-31+G(2df,p) level using isodesmic reactions [50]; j SiFx (x = 1-3), from the calculated CCSD(T)/CBS bond dissociation energies [54]; k SiClx (x = 1-3), from the calculated G2(MP2) bond dissociation energies [51]; l From heat of decomposition [96,97]; m Chemical equilibrium; n From threshold energies in reaction of Si + + SiF4 [40]; p From photoionization of SiHx [31]; q From collision-induced dissociation and charge transfer reactions [41]; r From chemical equilibrium study [28]. 79.9 kJ/mol(G3(CC)) where halosilanes were quantified using electron impact ionization mass spectrometry.…”
Section: Enthalpies Of Formation Of Halogenated Silanes and Cations (mentioning
confidence: 99%
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“…Modeling accuracy and correctness depend crucially on the quality of the kinetics and thermochemistry data input. Thermochemistry data of some halides and halohydrides of Si and C are provided in databases, 6-8 review, 9 as well as experimental [10][11][12][13][14][15][16] and theoretical studies.…”
Section: -4mentioning
confidence: 99%
“…Modeling accuracy and correctness depend crucially on the quality of the kinetics and thermochemistry data input. Thermochemistry data of some halides and halohydrides of Si and C are provided in databases, 6-8 review, 9 as well as experimental [10][11][12][13][14][15][16] and theoretical studies.17-32 Nevertheless, inconsistency derived from various means of achieving data along with many data mismatches have rendered it far from complete. Here we present thermochemical properties from quantum chemical calculations of a complete set of halides and halohydrides of Si and C, namely SiX n H m and CX n H m with X = F, Cl and Br, and n+m ≤4, covering the temperature range of 298-2500 K. The study range accommodates applications such as CVD process, surface etching of semiconductors, combustion, as well as fundamental studies.…”
mentioning
confidence: 99%