Atomization energies, enthalpies of formation, entropies as well as heat capacities of the SiH n X m and CH n X m systems, with X being F, Cl and Br, have been studied using quantum chemical calculations. The Gaussian-4 theory (G4) and Weizman-1 theory as modified by Barnes et al. 2009 (W1RO) have been applied in the calculations of the electronic, zero point and thermal energies. The effects of low-lying electronically excited states due to spin orbit coupling were included for all atoms and diatomic species by mean of the electronic partition functions derived from the experimental or computational energy splittings. The atomization energies, enthalpies of formation, entropies and heat capacities derived from both methods were observed to be reliable. The thermochemical properties in the temperature range of 298-2500 K are provided in the form of 7-coefficient NASA polynomials. © The Author Silicon carbide (SiC) is an attractive material for power electronics. The characteristics of having wide bandgap, high thermal conductivity, high blocking voltage and switching frequencies have made it superior for applications at high temperatures, frequencies and voltages.1 To this end, it is vital to achieve high material quality as well as manufacturing process reliability and efficiency. In chemical vapor deposition (CVD), a widely used fabrication method for SiC layers, this means suppressing the formation of Si clusters and parasitic depositions which are known to introduce defects and degrade the growing layers, along with shortening the lifetime of reactor components.
2-4Halogenated gases have been utilized to reduce the cluster formation by breaking the Si-Si bonds in the clusters and forming the stronger Si-halogen bonds and consequently introduce a new parameter into the process, namely the halogen/Si ratio. This ratio has shown impacts on not only the cluster formation and parasitic growth, but also on the growth rates as well as defect formations. 4,5 In complex processes such as CVD, computational modeling has become essential in research as well as process development and design. Modeling accuracy and correctness depend crucially on the quality of the kinetics and thermochemistry data input. Thermochemistry data of some halides and halohydrides of Si and C are provided in databases, 6-8 review, 9 as well as experimental [10][11][12][13][14][15][16] and theoretical studies.17-32 Nevertheless, inconsistency derived from various means of achieving data along with many data mismatches have rendered it far from complete. Here we present thermochemical properties from quantum chemical calculations of a complete set of halides and halohydrides of Si and C, namely SiX n H m and CX n H m with X = F, Cl and Br, and n+m ≤4, covering the temperature range of 298-2500 K. The study range accommodates applications such as CVD process, surface etching of semiconductors, combustion, as well as fundamental studies. The quantum chemistry composite methods of Gaussian-4 theory (G4) 33 are utilized and compared to the Weizmann...