Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

Theoretical investigation of surface roughness scattering in silicon nanowire transistors

“…͑This effect has been named "wavefunction deformation scattering." [13][14][15] ͒ To examine the significance of wave function deformation scattering, we plot an energy versus transmission curve ͑dot-dashed͒ for the rough SNWT calculated by the uncoupled mode space ͑UMS͒ approach, 6 in which only the variations in the electron subbands are included while the deformation and coupling terms are discarded. The fact that the UMS approach significantly overestimates the transmission for the rough device infers that wave function deformation scattering dominates the transport.…”

“…The same amount of surface roughness scattering severely degrades the mobility of a planar MOSFET under a high gate bias. 13 To explore the effects of L m , two additional values ͑1.4 nm for circles and 3.0 nm for triangles͒ were examined. The results show that ␤ is insensitive to L m , as expected from the averaging over a distribution of wavelengths that occurs at room temperature and high drain bias ͑V DS = 0.4 V͒.…”

Combined sources of intrinsic parameter fluctuations in sub-25nm generation UTB-SOI MOSFETs: A statistical simulation study

“…It has been experimentally demonstrated [10] that when silicon body thickness is reduced below 4 nm, slight (even single atomic layer) thickness variation have a significant impact on the threshold voltage and carrier mobility of UTB-SOI MOSFETs. At such thickness, the atomic scale roughness of the top and bottom Si/SiO 2 interfaces, that is on the scale of ±1 atomic layer (%0.3 nm) will introduce appreciable variation in the silicon body thickness.…”

A Quantum Mechanical Approach for the Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors

“…The effects of Si/SiO 2 interface roughness on carrier transport are as follows: 1) due to the dielectric constant difference between Si and SiO 2 , the roughness introduces electrostatic potential variations inside the Si body, which behave as a scattering potential for carriers, 2) due to the Si/SiO 2 conduction band-edge discontinuity, the roughness causes a fluctuating electron subband energy and wavefunction shape, which lowers the transmission from the source to the drain (so called "wavefunction deformation scattering" [5,6]). When the device size is relatively large and quantum confinement is weak, the first effect dominates, and SRS is well described by the first order perturbation theory and semiclassical models such as the Monte-Carlo approach [3,4].…”