Experimental Study of the Microwave Impedance of Resonant Tunneling Diodes

Abstract

The microwave impedance of high current Al0.3 Ga0.7 As‐GaAs‐Al0.3 Ga0.7 As resonant tunneling diodes is measured from 0.1 to 12.1 GHz over a large bias range at 300 K. Using an equivalent circuit model, the bias dependence of intrinsic conductance and capacitance suffice to explain the pronounced variations of impedance.

Direct evidence of the quasibound‐state lifetime effect in resonant tunneling from impedance measurements

“…Following our previous works, we are able to measure the small-signal impedance versus frequency characteristics of RTD in the NDR range [11] and in the thermally activated tunneling process [12] over a large frequency range. For the present measurements, the individual chips were mounted in BMH 60 microwave packages.…”