2015
DOI: 10.1103/physrevb.91.045129
|View full text |Cite
|
Sign up to set email alerts
|

Experimental study of electron-phonon coupling and electron internal thermalization in epitaxially grown ultrathin copper films

Abstract: Electron interaction in nanoscale metal structures is of major interest in understanding and designing nanoscale electronic devices. In this study, electron interaction in epitaxially grown 20-nm-thick copper film on Si(100) was studied using femtosecond pump-probe technique with tunable probe photon energy near the d-band to Fermi-level transition. It was found that probe-photon-energy dependence on the transient reflectivity signal can be divided into four regimes, and the borders of these regimes depend on … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

3
18
0

Year Published

2015
2015
2022
2022

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 25 publications
(25 citation statements)
references
References 36 publications
3
18
0
Order By: Relevance
“…The background signal of the transient reflectivity relaxes to an equilibrium value within a few picoseconds regardless of the orientation of the sample, indicating the isotropic nature of the initial peak and the following decay. The possible origin of the non-oscillating background decay is energy relaxation of electrons from a non-equilibrium state to a quasi-equilibrium state in which electrons are thermalized through electron-electron interaction3637. The behavior of this background component is quite different from the reported optically excited phonons in GaAs1718 where the background component decays in slower time-scale of carrier recombination of nanosecond383940.…”
Section: Resultsmentioning
confidence: 99%
“…The background signal of the transient reflectivity relaxes to an equilibrium value within a few picoseconds regardless of the orientation of the sample, indicating the isotropic nature of the initial peak and the following decay. The possible origin of the non-oscillating background decay is energy relaxation of electrons from a non-equilibrium state to a quasi-equilibrium state in which electrons are thermalized through electron-electron interaction3637. The behavior of this background component is quite different from the reported optically excited phonons in GaAs1718 where the background component decays in slower time-scale of carrier recombination of nanosecond383940.…”
Section: Resultsmentioning
confidence: 99%
“…For example, it is difficult and in some cases even impossible to unambiguously disentangle the different contributions of measured reflectivity transients after short pulse laser excitation since they can depend critically on the experimental parameters (e.g. probe wavelength [13]).…”
Section: Introductionmentioning
confidence: 99%
“…To conclude, by combining the first-principles calculations of carrier dynamics and optical response, this Letter presents a complete theoretical description of pump-probe measurements, free of any fitting parameters that are typical in previous analyses [35,[47][48][49]. The theory here accounts for detailed energy distributions of excited carriers (Fig.…”
Section: H Y S I C a L R E V I E W L E T T E R Smentioning
confidence: 99%
“…The initial response additionally includes contributions from short-lived highly nonthermal carriers excited initially, which become particularly important at low pump powers when smaller temperature changes limit the thermal contribution. Higher-energy nonthermal carriers exhibit faster rise and decay times than the thermal carriers closer to the Fermi level [26,35], due to higher electron-electron scattering rates. Their response also spans a greater range in probe wavelength compared to thermal electrons, which primarily affect only the resonant d band to Fermi level transition [26,33,46], Combining ab initio predictions and experimental measurements of 60-nm colloidal PRL 118, 087401 (2017) P…”
Section: ∂ ∂εmentioning
confidence: 99%
See 1 more Smart Citation