Experimental study of electrical properties of ZnO nanowire random networks for gas sensing and electronic devices

Zhang, D.; Chava, Sirisha; Berven, Christine; Lee, S. K.; Devitt, R.; Katkanant, V.

doi:10.1007/s00339-010-5567-6

Cited by 42 publications

(25 citation statements)

References 34 publications

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“…At sufficiently high annealing temperatures, the effect of the increased conductivity was found to be robust, even after the samples were returned to room-temperature and the environmental chambers evacuated. These results are qualitatively consistent with previous work on the interaction of ZnO with hydrogen gas where hydrogen has been identified as being able to act as a donor [4], [9]- [12]. The effect of the annealing process was similar for both samples.…”

Section: Discussionsupporting

confidence: 94%

“…The electrical properties of films of ZnO and MgZnO nanoparticles were studied as a function of annealing temperature in a hydrogen ambient. Similar work was done by this research team on ZnO nanowires, which showed a significant response to H 2 gas at elevated temperatures [4]. 2 ] in an aqueous solution.…”

Section: Introductionmentioning

confidence: 53%

“…When heated in an H 2 ambient, the current passing through the nanoparticles further increased with an increase in temperature which would be expected since hydrogen is known to be a dopant for ZnO [4].…”

Section: Resultsmentioning

confidence: 93%

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Robust conductivity changes in ZnO and MgZnO nanoparticle films from annealing in hydrogen ambient

Chava

Young

Sanchez

et al. 2011

2011 11th IEEE International Conference on Nanotechnology

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We report changes observed in the I-V characteristics of ZnO and MgZnO nanoparticle thin films after annealing in H 2 at sufficiently high temperatures. The nanoparticles were grown on insulating silicon substrates and had an average diameter of 30 nm. The devices were of a two terminal design, where the terminals consisted of two 25 μm diameter gold wires laid parallel to each other on the nanoparticle film to measure the current passing through the film. When exposed to H 2 gas at room temperature, no significant changes in the current-voltage behavior of the nanoparticles were observed relative to measurements done in vacuum. Annealing in H 2 below 100 ˚C also resulted in no significant change in the current. When annealed above 100 ˚C, we observed an increase of about a factor of twenty that was semi-permanent. The origin of the change in I-V characteristics of ZnO and MgZnO nanoparticles when annealed in H 2 will be discussed.Index Terms -ZnO and MgZnO nanoparticles, hydrogen ambient, nanoparticle conductivity.

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Section: Discussionsupporting

confidence: 94%

Section: Introductionmentioning

confidence: 53%

See 1 more Smart Citation

Robust conductivity changes in ZnO and MgZnO nanoparticle films from annealing in hydrogen ambient

Chava

Young

Sanchez

et al. 2011

2011 11th IEEE International Conference on Nanotechnology

View full text Add to dashboard Cite

show abstract

“…Recently, nanoparticles [1][2][3], nanofilms [4][5][6], nanotubes [7] and nanowires [8][9][10][11][12] have attracted considerable attention to the researchers. The motivation in these papers is mainly because nanomaterials have many peculiar physical properties compared with those in bulk materials.…”

Section: Introductionmentioning

confidence: 99%

Magnetization and phase diagram of a cubic nanowire in the presence of the crystal field and the transverse field

Liu

Jiang

Wang

et al. 2012

Journal of Magnetism and Magnetic Materials

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“…Aer passivation, ZnO is unable to react with gases, the trapped electrons are released and the conductivity increases. The mechanism has been described in detail for various 1D ZnO nanostructures such as nanowires 42 and nanobers, 43 and for 2D structures such as nanowalls. 44 The process has been proposed for use in various gas detectors, the sensitivity and selectivity of which depend on the ability for O 2 to be removed from the semiconductor surface.…”

mentioning

confidence: 99%

ZnS coating for enhanced environmental stability and improved properties of ZnO thin films

et al. 2018

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a Low environmental stability of ZnO nanostructures in hydrophilic systems is a crucial factor limiting their practical applications. ZnO nanomaterials need surface passivation with different water-insoluble compounds. This study describes a one-step passivation process of polycrystalline ZnO films with ZnS as a facile method of ZnO surface coating. A simple sulfidation reaction was carried out in gas-phase H 2 S and it resulted in formation of a ZnS thin layer on the ZnO surface. The ZnS layer not only inhibited the ZnO dissolving process in water but additionally improved its mechanical and electrical properties. After the passivation process, ZnO/ZnS films remained stable in water for over seven days. The electrical conductivity of the ZnO films increased about 500-fold as a result of surface defect passivation and the removal of oxygen molecules which can trap free carriers. The nanohardness and Young's modulus of the samples increased about 64% and 14%, respectively after the ZnS coating formation. Nanowear tests performed using nanoindentation methods revealed reduced values of surface displacements for the ZnO/ZnS system. Moreover, both ZnO and ZnO/ZnS films showed antimicrobial properties against Escherichia coli.

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Experimental study of electrical properties of ZnO nanowire random networks for gas sensing and electronic devices

Cited by 42 publications

References 34 publications

Robust conductivity changes in ZnO and MgZnO nanoparticle films from annealing in hydrogen ambient

Robust conductivity changes in ZnO and MgZnO nanoparticle films from annealing in hydrogen ambient

Magnetization and phase diagram of a cubic nanowire in the presence of the crystal field and the transverse field

ZnS coating for enhanced environmental stability and improved properties of ZnO thin films

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