Experimental studies of dielectric relaxation and thermally activated a.c. conduction in Se90Cd10−xSbx (2 ≤ x ≤ 8) chalcogenide glassy alloys using correlated barrier hopping model

Shukla, Neeraj; Mehta, N.; Dwivedi, D. K.

doi:10.1007/s10854-016-5352-1

Cited by 11 publications

(3 citation statements)

References 53 publications

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“…A shift in the Fermi level and an increase in charge carrier concentration might result from the presence of an additive. 61,62 Such findings are in agreement with the previously reported results. 47,52,63…”

Section: Calculation Of the Distribution Parameter (A) And Relaxation...supporting

confidence: 93%

Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Agarwal,

Lohia,

Dwivedi

2023

New J. Chem.

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Section: Calculation Of the Distribution Parameter (A) And Relaxation...supporting

confidence: 93%

Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Agarwal,

Lohia,

Dwivedi

2023

New J. Chem.

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“…The M* modulus refers to limiting the electrode or interfacial polarization contact. 51,52 The complex dielectric modulus (M*) is calculated as follows 48,53,54 :…”

Section: Nonlinear Optical Properties Of G-c 3 N 4 /Pmma Polymeric Na...mentioning

confidence: 99%

Synthesis and characterization g‐C₃N₄‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications

Mohammed

Yahia

Farid

2022

J of Applied Polymer Sci

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Solution casting was used to synthesis polymethyl methacrylate (PMMA) nanocomposites with graphitic carbon nitride (g‐C3N4) nanoparticles in various percentages (0.033, 0.166, 0.33, 1.665, and 3.3 wt%). XRD patterns confirmed the amorphous nature of PMMA/C3N4 nanocomposites. Optical constants are obtained at room temperature in the 200–2500 nm wavelength range. The optical band gaps of PMMA/C3N4 doped films, both direct and indirect, are measured and have values change from 4.8 to 2.32 eV for Enormalgind and changes from 5 to 3.7 eV for Enormalgnormald. The refractive index values of the materials were also calculated using Moss, Reddy, Anani, and Kumar‐Singh relationships with average values vary from (2.109 to 2.529) and vary from 2.155 to 2.32 for indirect and direct transition, respectively. The dielectric constant, dielectric loss, and AC electrical conductivity at RT and the g‐C3N4 doping level was examined as frequency variables from 100 to 1 MHz. In consideration of Jonscher's universal power law, the variation of σAC with frequency was examined. The addition of C3N4 appears to raise the σAC of the studied films, making them attractive for semiconductor applications. According to the optical limiting results, the samples doped with g‐C3N4 are severely attenuated for the laser beam of 638.2 nm. PMMA doped with g‐C3N4 is a viable contender for electronic and optoelectronic applications, particularly laser power reduction.

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“…Chalcogenide glasses have attracted much attention because they possess the large range of miscellaneous applications in the field of electronic, optoelectronics such as optical switching devices, xerography, infra-red telecommunication and phase change memory (PCM) [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Some Physico-Chemical Properties in Multi-Component Se–Te–Sn–Sb (0 ≤ x ≤ 6) Quaternary Chalcogenide Glassy System

et al. 2018

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In the present work we report physico-chemical properties in novel Se 78 -x Te 20 Sn 2 Sb x (x = 0, 2, 4 and 6) glassy system prepared by melt quench technique. Various physico-chemical properties such as coordination number, lone pair of electrons, number of constraints, density, molar volume, compactness, mean bond energy, cohesive energy, glass transition temperature and covalence character has been estimated. The compositional dependence of aforesaid physico-chemical properties has been investigated. It has been observed that average number of constraints, mean bond energy, glass transition temperature are found to increase where as number of lone pair of electrons and electro negativity decreases with increases of Sb content in the Se 78 -x Te 20 Sn 2 Sb x (x = 0, 2, 4 and 6) glassy alloys.

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Experimental studies of dielectric relaxation and thermally activated a.c. conduction in Se90Cd10−xSbx (2 ≤ x ≤ 8) chalcogenide glassy alloys using correlated barrier hopping model

Cited by 11 publications

References 53 publications

Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Synthesis and characterization g‐C₃N₄‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications

Investigation of Some Physico-Chemical Properties in Multi-Component Se–Te–Sn–Sb (0 ≤ x ≤ 6) Quaternary Chalcogenide Glassy System

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Experimental studies of dielectric relaxation and thermally activated a.c. conduction in Se90Cd10−xSbx (2 ≤ x ≤ 8) chalcogenide glassy alloys using correlated barrier hopping model

Cited by 11 publications

References 53 publications

Enhancement of dielectric relaxation and AC conductivity of Te(1−x)(GeSe0.5)Scx (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Enhancement of dielectric relaxation and AC conductivity of Te(1−x)(GeSe0.5)Scx (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Synthesis and characterization g‐C3N4‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications

Investigation of Some Physico-Chemical Properties in Multi-Component Se–Te–Sn–Sb (0 ≤ x ≤ 6) Quaternary Chalcogenide Glassy System

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Product

Resources

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Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Synthesis and characterization g‐C₃N₄‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications