Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

Aguiar, Vitor A. P.; Added, N.; Medina, N. H.; Macchione, Eduardo Luiz Augusto; Tabacniks, M.H.; Aguirre, Fernando; Silveira, M. A. G.; Santos, R.B.B.; Seixas, L. E.

doi:10.1016/j.nimb.2014.02.105

Cited by 36 publications

(7 citation statements)

References 8 publications

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“…The RARF consists of the heavy ion linear accelerator RLAC, and the cyclotron AVF and RRC, both of which are available as RRC injectors. Light ion energy can be accelerated to 440 MeV/u, uranium ion energy accelerated to 350 MeV/u [142,143]. RADEF, a heavy ion radiation test facility in Jyväskylä, Finland, can provide heavy ion beams of 139 MeV N, 523 MeV Fe, 768 MeV Kr, 186 MeV Ne, 372 MeV Ar, 1217 MeV Xe, and so on.…”

Section: The High-energy Heavy Ions Radiation Simulatormentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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Section: The High-energy Heavy Ions Radiation Simulatormentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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“…The heavy ions tests were performed at the Laboratório Aberto de Física Nuclear of the Universidade de São Paulo (LAFN-USP), Brazil in December 2015 and April 2016 [8]. The ion beams were produced and accelerated by the São Paulo 8UD Pelletron Accelerator.…”

Section: A Setup Measurement Of Seu/mbu Under Heavy Ionsmentioning

confidence: 99%

Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA

Tonfat

Kastensmidt

Artola

et al. 2017

IEEE Trans. Nucl. Sci.

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“…The newer Pelletron generators were made of chains of metal pellets, joined by insulating nylon links, that are charged by induction [15] dispensing with the rubbing contacts or corona discharges used in Van de Graaff generators. Pelletron generators reach 25 million volts, producing highly uniform ion beams [16] and they have been used for producing secondary beams of unstable nuclei [17], to investigate silicon-germanium heterojunction bipolar transistors (SiGe HBTs) [18] and other applications of ion beam interactions with materials and atoms.…”

Section: Particle Accelerators: Van De Graaff and Pelletron Generatorsmentioning

confidence: 99%