Experimental realization and magnetotransport properties of half-metallic Fe2Si

Forbes, Andrew; Dulal, Rajendra; Bhattarai, Niraj; Pegg, Ian L.; Philip, John

doi:10.1063/1.5096862

Cited by 13 publications

(15 citation statements)

References 30 publications

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“…At 10 K, R 0 = 2.86 × 10 −8 Ω cm/T, or a charge carrier density of n = 2.18 × 10 22 cm −3 . These values are similar to the values previously obtained for the related compound Fe 2 Si [21].…”

Section: Hall Effectsupporting

confidence: 91%

“…The medium temperature range was fit with a metallic behavior [21]. Here, a better fit was obtained with a simple T dependence rather than the complete Bloch-Grueisen integral, which is consistent with the fact that this integral reduces to a linear dependence on temperature in the high temperature limit T ≫ Θ D .…”

Section: Longitudinal Resistivitysupporting

confidence: 71%

“…Since a negative spin wave excitation gap is nonphysical, we instead conclude the gap is not present, ∆ ≈ 0. This contrasts with Fe 2 Si, which has a positive gap [21].…”

Section: B Magnetic Propertiesmentioning

confidence: 86%

“…This exponential approximation is often used for the Bose-Einstein integral [20,21]. Here t H is based on a spin wave energy gap, ∆, of the form t H = k B T /∆.…”

Section: B Magnetic Propertiesmentioning

confidence: 99%

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Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films

Forbes,

Bhattarai,

Gassen

et al. 2021

Preprint

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Thin films of the ferromagnet Fe 2 Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the crystalline ferromagnetic Fe 2 Ge phase. The observed high temperature maximum in the longitudinal resistivity, as well as the observed suppression of electron-magnon scattering at low temperatures, point to the presence of strong spin polarization in this material. Measurements of the Hall resistivity, ρ xy , show contributions from both the ordinary Hall effect and anomalous Hall effect, ρ AH xy , from which we determined the charge carrier concentration and mobility. Measurements also show a small negative magnetoresistance in both the longitudinal and transverse geometries. Fe 2 Ge holds promise as a useful spintronic material, especially for its semiconductor compatibility.

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Section: Hall Effectsupporting

confidence: 91%

Section: Longitudinal Resistivitysupporting

confidence: 71%

“…Since a negative spin wave excitation gap is nonphysical, we instead conclude the gap is not present, ∆ ≈ 0. This contrasts with Fe 2 Si, which has a positive gap [21].…”

Section: B Magnetic Propertiesmentioning

confidence: 86%

“…This exponential approximation is often used for the Bose-Einstein integral [20,21]. Here t H is based on a spin wave energy gap, ∆, of the form t H = k B T /∆.…”

Section: B Magnetic Propertiesmentioning

confidence: 99%

See 2 more Smart Citations

Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films

Forbes,

Bhattarai,

Gassen

et al. 2021

Preprint

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“…Here, K is a Scherrer constant and λ is the wavelength of the x-rays used, 1.54 Å. [20] The average crystallite size calculated from the strongest peak ( 112) is found to be 181 Å. Table I summarizes the estimate of the average crystallite size corresponding to each diffraction peak calculated using experimental data.…”

Section: Results and Analysismentioning

confidence: 99%

Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film

et al. 2020

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Here, the authors report a detailed method of growing LaAlGe, a nonmagnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. About 50-nm-thick LaAlGe films were deposited and annealed for 16 h in situ at a temperature of 793 K. As-grown high-quality films showed uniform surface topography and near ideal stoichiometry with a body-centered tetragonal crystal structure. Temperature-dependent longitudinal resistivity can be understood with dominant interband s-d electron-phonon scattering in the temperature range of 5-40 K. Hall measurements confirmed the semimetallic nature of the films with an electron-dominated charge carrier density of ∼7.15 × 10 21 cm −3 at 5 K.

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Magnetotransport Study of Dirac Metal FeSn Thin Films Grown on Silicon Substrates

Bhattarai

Forbes

Saqat

et al. 2023

Physica Status Solidi (a)

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Thin films of iron–tin alloy FeSn are grown on silicon substrates and their structural and transport properties are investigated for the first time. Herein, the molecular beam epitaxy method is used to grow 50 and 30 nm thick FeSn films on silicon substrates containing 10 nm of MgO as a buffer layer. The films are characterized structurally using an X‐ray diffractometer, showing a hexagonal crystal structure with the space group P6/mmm (191). The results from electrical and magnetotransport measurements show these films exhibit characteristics close to metals. Herein, the magnetotransport properties of the thin films which show positive magnetoresistance and sample‐dependent Hall effect with possible multiband transport are further measured.

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Experimental realization and magnetotransport properties of half-metallic Fe2Si

Cited by 13 publications

References 30 publications

Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films

Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films

Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film

Magnetotransport Study of Dirac Metal FeSn Thin Films Grown on Silicon Substrates

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