Experimental phase diagram of SiC in CH₃SiCl₃–Ar–H₂ system produced by fluidized bed chemical vapor deposition and its nuclear applications

Abstract

Abstract

Dual layer SiC coating on matrix graphite sphere prepared by pack cementation and fluidized‐bed chemical vapor deposition

“…The d ‐SiC layer is prepared through the FB‐CVD process (reaction ) according to Refs. .…”

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H2*

“…Thus, it is widely used within functional and structural materials in high temperature, aerospace, nuclear energy, and other applications 5‐9 . Chemical vapor deposition (CVD) and infiltration (CVI) are among the most feasible and widely studied SiC fabrication approaches because of their ability to handle complex geometry, flexible processing conditions, and the high purity, high density, and excellent crystalline morphology of the prepared SiC 10‐20 . Methyltrichlorosilane (CH 3 SiCl 3 , MTS) is the most commonly used gas precursor for CVD and CVI of SiC 15‐18,21‐24 owing to its equivalent ratio of silicon (Si) to carbon (C) and the wide range of allowable deposition temperatures.…”

“…[25][26][27][28][29][30][31][32] The SiC grain size increases with increasing deposition temperature 13,31 or pressure, 29,30 but with decreasing H 2 /MTS ratio. 29,32 In general, a lower deposition temperature 16,28,33,34 or a greater pressure 28,32,34 is favorable for Si co-deposition with SiC. Si is also found to coexist with SiC at relatively high H 2 /MTS ratios.…”

“…[5][6][7][8][9] Chemical vapor deposition (CVD) and infiltration (CVI) are among the most feasible and widely studied SiC fabrication approaches because of their ability to handle complex geometry, flexible processing conditions, and the high purity, high density, and excellent crystalline morphology of the prepared SiC. [10][11][12][13][14][15][16][17][18][19][20] Methyltrichlorosilane (CH 3 SiCl 3 , MTS) is the most commonly used gas precursor for CVD and CVI of SiC [15][16][17][18][21][22][23][24] owing to its equivalent ratio of silicon (Si) to carbon (C) and the wide range of allowable deposition temperatures. Hydrogen (H 2 ) is frequently used as the carrier and diluent gas with MTS, both delivering the MTS precursor to the reactor and regulating the concentration of mixed gas precursors.…”