Influence of topological constraints on ion damage resistance of amorphous hydrogenated silicon carbide

Su, Qing; Wang, Tianyao; Gigax, Jonathan; Shao, Lin; Lanford, W. A.; Nastasi, M.; Li, Liyi; Bhattarai, Gyanendra; Paquette, Michelle M.; King, Sean W.

doi:10.1016/j.actamat.2018.12.016

Cited by 5 publications

(5 citation statements)

References 117 publications

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“…nuclear energy (fission & fusion), electronic devices in space vehicles, particle detectors, semiconductor doping etc. 1 – 7 , wherein materials are subjected to severe irradiation with low energy and/or high energy particles (predominantly slowing down by ballistic/nuclear collisions (S n ) 8 and electronic excitations (S e ) 8 respectively) during service. For these applications, understanding the behaviour of the materials under irradiation, and thus designing them to be more radiation damage tolerant, is therefore crucial.…”

Section: Introductionmentioning

confidence: 99%

Grain size effect on the radiation damage tolerance of cubic zirconia against simultaneous low and high energy heavy ions: Nano triumphs bulk

Kalita

Ghosh

Gutierrez

et al. 2021

Sci Rep

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Irradiation induced damage in materials is highly detrimental and is a critical issue in several vital science and technology fields, e.g., the nuclear and space industries. While the effect of dimensionality (nano/bulk) of materials on its radiation damage tolerance has been receiving tremendous interest, studies have only concentrated on low energy (nuclear energy loss (Sn) dominant) and high energy (electronic energy loss (Se) dominant) irradiations independently (wherein, interestingly, the effect is opposite). In-fact, research on radiation damage in general has almost entirely focused only on independent irradiations with low and/or high energy particles till date, and investigations under simultaneous impingement of energetic particles (which also correspond to the actual irradiation conditions during real-world applications) are very scarce. The present work elucidates, taking cubic zirconia as a model system, the effect of grain size (26 nm vs 80 nm) on the radiation tolerance against simultaneous irradiation with low energy (900 keV I) and high energy (27 meV Fe) particles/ions; and, in particular, introduces the enhancement in the radiation damage tolerance upon downsizing from bulk to nano dimension. This result is interpreted within the framework of the thermal-spike model after considering (1) the fact that there is essentially no spatial and time overlap between the damage events of the two ‘simultaneous’ irradiations, and (2) the influence of grain size on radiation damage against individual Sn and Se. The present work besides providing the first fundamental insights into how the grain size/grain boundary density inherently mediates the radiation response of a material to simultaneous Sn and Se deposition, also (1) paves the way for potential application of nano-crystalline materials in the nuclear industry (where simultaneous irradiations with low and high energy particles correspond to the actual irradiation conditions), and (2) lays the groundwork for understanding the material behaviour under other simultaneous (viz. Sn and Sn, Se and Se) irradiations.

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Section: Introductionmentioning

confidence: 99%

Grain size effect on the radiation damage tolerance of cubic zirconia against simultaneous low and high energy heavy ions: Nano triumphs bulk

Kalita

Ghosh

Gutierrez

et al. 2021

Sci Rep

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“…Further applications are reactions occurring during the deposition of low-κ dielectric SiCO/H materials, as well as thermal treatment of these materials (post or concurrent synthesis) in reactive atmospheres such as H 2 O, CO 2 , or H 2 . Future direction involves thermodynamic and kinetic stability of dielectric films, thermal conductivity, and the effects of radiation damage , or ion implantation . Obviously, force field development is an ongoing process with room for improvement and progress.…”

Section: Discussionmentioning

confidence: 99%

Reactive Force Field for Simulations of the Pyrolysis of Polysiloxanes into Silicon Oxycarbide Ceramics

2019

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We provide a new reactive force field (ReaxFF) for simulations of silicon oxycarbide (SiCO) ceramics and of their syntheses from inorganic polymer precursors. The validity of the force field is extensively tested against experimental and computational thermochemical data. Its performance in simulation at elevated temperatures is gauged by the results of comprehensive ab initio molecular dynamics simulations. We apply the force field to the formation of amorphous SiCO in a simulated polymer pyrolysis. Modeling results are in good agreement with experimental observations and allow new insights into the formation of graphene segregations embedded in an amorphous oxycarbide matrix. The new ReaxFF for Si–C–O–H compounds enables large-scale and long-time atomistic simulations with unprecedented fidelity.

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“…The network connectivity thus determines Young's modulus in proportion to a power law with exponent 1.5 . This may allow the prediction of physical sputtering yields and RIE rates …”

Section: Challengesmentioning

confidence: 99%

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

Miyajima

Ishikawa

Sekine

et al. 2019

Plasma Processes & Polymers

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The developments in advanced interconnect technology for semiconductor logic devices for the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials, including fluorosilicate glass and carbon‐doped silicon oxide is reviewed. The chemical bond structures of low‐k materials are summarized to help mitigate the k value degradation caused by moisture uptake after plasma processes. Damage suppression is accomplished by integrating deposition chemistries, pattern etch transfer, and post‐etch cleaning technologies. On the basis of analyses results, a discussion on the bond engineering of low‐k materials and their degradation during plasma processing is given. Challenges facing low‐k interconnect technology are also addressed.

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Influence of topological constraints on ion damage resistance of amorphous hydrogenated silicon carbide

Cited by 5 publications

References 117 publications

Grain size effect on the radiation damage tolerance of cubic zirconia against simultaneous low and high energy heavy ions: Nano triumphs bulk

Grain size effect on the radiation damage tolerance of cubic zirconia against simultaneous low and high energy heavy ions: Nano triumphs bulk

Reactive Force Field for Simulations of the Pyrolysis of Polysiloxanes into Silicon Oxycarbide Ceramics

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

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