Experimental Methods for Determining Diffusion Coefficients in Semiconductors

Evaluation of Diffusion Coefficients from Nonlinear Impurity Profiles

“…To evaluate the concentration dependence of the diffusion coefficient, the Boltzmann-Matano analysis ( 4) is used when diffusion is performed with constant surface concentration. The diffusion coefficient is then determined by D [9] 2t( de \ dx/~, as shown in the analysis. This method has been successfully used to evaluate the diffusion coefficient of several diffusants.…”

Grain boundary diffusion of phosphorus in polycrystalline silicon

“…The effect of preferential diffusion on the performance of p-n junction solar cells has been pointed out by several authors [7,81. In this work we attempted to study the diffusion of phosphorus in polycrystalline silicon and arrive at the grain boundary diffusion coefficients. Of all the methods available for depth profiling, the use of a radioactive tracer coupled with serial sectioning can be considered the most reliable [9]. Measurement of sheet resistance coupled with serial sectioning, generally employed for single-crystal silicon, is not appropriate for polycrystalline silicon since a grain boundary may be present between the resistance probes.…”