Grain boundary diffusion of phosphorus in polycrystalline silicon

Abstract

Diffusion of radioactive phosphorus in polycrystalline silicon has been studied in the temperature range 566-980 "C. Diffusion profiles were obtained by anodic oxidation sectioning coupled with radio tracer detection. Diffusion coefficients in the grain boundary were obtained following Leclaire's method of analysis. An Arrhenius plot of grain boundary diffusion coefficients gave rise to an activation energy of 2.65 eV and pre-exponential factor D;= 4.8 x l O -3 cm2 S".

Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing

“…The high interstitial concentration significantly increases the dopant diffusivity, which is induced by grain boundary diffusion or transient enhanced diffusion (TED). [14][15][16][17][18][19] However, the TED phenomenon has been reported to occur on a large scale of approximately 100 nm in a single crystalline Si material, to which flash lamp annealing was applied to induce transient enhanced diffusion. [14][15][16][17]20,21 Furthermore, because the current nano-grained microstructure shown in Fig.…”

Trap-Assisted Dopant Compensation Prevents Shunting in poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

“…For high temperature, >1000 °C, annealing of poly-Si/SiO x passivated contacts, these values for L diff are reasonable. However, specific values can differ significantly depending on the annealing temperature, poly-Si grain size, and doping level in poly-Si [12][13][14][15][16]. In these simulations, we assume a trap density, N t = 10 18 cm -3 , in poly-Si.…”

Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

“…[3][4][5] In addition, it has been reported that the grain-boundary diffusion coefficient in some dopant elements is larger than that in single-crystal Si. [6][7][8] In the present study, to clarify arsenic (As) diffusion phenomena at poly-Si grain boundaries under the annealing conditions of actual devices, the effect of boron (B) or phosphorus (P) predoping on the As distribution was investigated by laser-assisted atom probe tomography (APT). Laser-assisted APT is a powerful method for obtaining a three-dimensional dopant distribution in semiconductor materials with an almost atomic-scale spatial resolution.…”