Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise

Abe, Kenichi; Teramoto, Akinobu; Watabe, S.; Fujisawa, Toshimasa; Sugawa, Shigetoshi; Kamata, Yutaka; Shibusawa, K.; Ohmi, Tadahiro

doi:10.1143/jjap.49.04dc07

Cited by 24 publications

(19 citation statements)

References 44 publications

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“…On the other hand, random telegraph noise (RTN) is another issue of the fluctuation of transistor characteristics [9], and the suppression of the RTN effect is essential for future scaled MOSFETs. It is reported that the amplitude of RTN depends on channel doping concentration [10]. These results suggest that, if the dopant atoms are removed from the channel, not only Vth variability but DIBL variability, COV variability, and RTN amplitude will be suppressed.…”

Section: Introductionmentioning

confidence: 86%

Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs

Hiramoto

Kumar

Mizutani

et al. 2011

2011 IEEE Custom Integrated Circuits Conference (CICC)

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Statistical characteristics of intrinsic channel fully depleted (FD) SOI MOSFETs and conventional bulk MOSFETs are compared. It is experimentally shown that not only threshold voltage (Vth) variability but drain induced barrier lowering (DIBL) and current onset voltage (COV) variability is well suppressed in FD SOI MOSFETs. Moreover, time-dependent Vth change due to random telegraph noise (RTN) is also smaller in FD SOI MOSFETs. The mechanisms of these variability suppressions are discussed using three dimensional device simulation and it terms out that the absence of random dopant fluctuation (RDF) is responsible for the suppressed variability. These results strongly demonstrate the advantage of intrinsic channel MOSFETs where the channel does not include dopant atoms.

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Section: Introductionmentioning

confidence: 86%

Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs

Hiramoto

Kumar

Mizutani

et al. 2011

2011 IEEE Custom Integrated Circuits Conference (CICC)

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“…This means that channel percolation increases the probability of RTN generation. Figure 9 shows the Gumbel plot of the RTN amplitude for MOSFETs with varying channel doping [51]. The channel percolation is accelerated by increasing channel doping concentration [46][47][48].…”

Section: Statistical Evaluation Of Rtn Characteristicsmentioning

confidence: 99%

“…This figure shows that the probability of the number of MOSFETs with large amplitude increases with doping concentration. RTN is increased by channel Figure 9 shows the Gumbel plot of the RTN amplitude for MOSFETs with varying channel doping [51]. The channel percolation is accelerated by increasing channel doping concentration [46][47][48].…”

Section: Statistical Evaluation Of Rtn Characteristicsmentioning

confidence: 99%

“…This indicates that the high dose in the channel region or near the source/drain region results in high RTN because of channel percolation enhancement. Figure 9 shows the Gumbel plot of the RTN amplitude for MOSFETs with varying channel doping [51]. The channel percolation is accelerated by increasing channel doping concentration [46][47][48].…”

Section: Statistical Evaluation Of Rtn Characteristicsmentioning

confidence: 99%

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Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices

Teramoto

2021

Electronics

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Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evaluation results are described. Variability and fluctuation are critical in miniaturized semiconductor devices because signal voltage must be reduced in such devices. Especially, the signal voltage in multi-bit memories must be small. One of the most serious issues in metal-oxide-semiconductor field-effect-transistors (MOSFETs) is low-frequency noise, which occurs when the signal current flows at the interface of different materials, such as SiO2/Si. Variability of low-frequency noise increases with MOSFET shrinkage. To assess the effect of this noise on MOSFETs, we must first understand their characteristics statistically, and then, sufficient samples must be accurately evaluated in a short period. This study compares statistical evaluation methods of low-frequency noise to the trend of conventional evaluation methods, and this study’s findings are presented.

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“…To fully understand the RTN, it is necessary to characterize the statistical distributions, emission-capture time constants, activation energies, noise power spectra densities, physical locations, and the relations to detailed fabrication processes. In spite of being studied in the past several decades [ 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ], many RTN-related issues still remain as active research topics due to the nature of its complexity.…”

Section: Introductionmentioning

confidence: 99%

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

Chao

et al. 2017

Sensors

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A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the noise source. The long tail of the random noise (RN) distribution is directly linked to the RTN from the pixel source follower (SF). The full 8.3 Mpixels are classified into four categories according to the observed RTN histogram peaks. A theoretical formula describing the RTN as a function of the time difference between the two phases of the correlated double sampling (CDS) is derived and validated by measured data. An on-chip time constant extraction method is developed and applied to the RTN analysis. The effects of readout circuit bandwidth on the settling ratios of the RTN histograms are investigated and successfully accounted for in a simulation using a RTN behavior model.

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Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise

Cited by 24 publications

References 44 publications

Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs

Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs

Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

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