Experimental determination of the mercury-rich corner of the Hg-Cd-Te phase diagram

Herning, P. E.

doi:10.1007/bf02659832

Cited by 32 publications

(4 citation statements)

References 13 publications

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“…The numbers on the isoconcentration lines give the values of x in the solid solution Hg 1−x Cd x Te. Herning [127] measured the solubility of Te and CdTe in Hg in the temperature range 200-400 • C with results that confirmed the very low solubility.…”

Section: Liquidus Solidus and Solvus Surfacesmentioning

confidence: 84%

“…Vanyukov et al [126] determined liquidus isotherms in the tellurium-mercuryrich corners of the ternary system using the technique of quenching and subsequent analysis. Herning [127] developed a vertical 'infinite-melt' reflux technique that allowed the determination of the Hg-rich liquidus from solubility measurements. Their data as well as that of Meschter et al [128] fall on calculated isotherms predicted by Tung et al [129].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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Section: Liquidus Solidus and Solvus Surfacesmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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“…The Cd solubility in the melt is approximately two orders of magnitude lower than that of the Te (9) and does not play a major role in growth. In our experiments, we have used 8-10% Te in the Hg melt and have obtained layers with surface fractions of CdTe in the range of 0.3-0.2, as expected from the phase diagram work of Herning (9).…”

Section: Totementioning

confidence: 98%

Isothermal Liquid Phase Epitaxial Growth of Mercury Cadmium Telluride

Fleming

Stevenson

1987

J. Electrochem. Soc.

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A method is presented for the isothermal growth of mercury cadmium telluride from a mercury or tellurium-rich melt. In accord with a proposed model, growth proceeds by HgTe deposition from the melt onto the substrate and interdiffusion between the Hg and Cd within the growing layer. Mercury-rich interdiffusion coefficients are determined from an analysis of experimental composition profiles.Mercury cadmium telluride consists of a continuous series of solid solutions between mercury telluride and cadmium telluride. Currently it is of great interest for use in infrared detectors in the long wavelength regime, for use in optical communications systems, and in scientific spectroscopic applications. This interest is based on the continuous change of the direct bandgap as the composition varies from HgTe (-0.32 eV) to CdTe (1.6 eV) (1). However, there are substantial problems with growth and processing of this material, see for example Ref.(2). A large liquidus-solidus lens in the pseudobinary temperature-composition diagram makes it difficult to grow homogeneous bulk material. In addition, the material is mechanically weak, the mercury vapor pressure is high during processing and growth, and it is difficult to experimentally define the material thermodynamically since it is a ternary system. A great many growth techniques have been developed, both bulk and epitaxial. In this paper we present a new technique for growth from an isothermal melt and provide an analysis of the growth mechanism. In addition, mercury-rich interdiffusion coefficients are obtained from an analysis of the composition profiles. ExperimentalThe experimental geometry for growth from a mercury-rich melt is shown in Fig. 1. A CdTe {111} substrate is initially placed above a reservoir of mercury large enough to cover the substrate when the ampul is tilted 180 ~ Sufficient Te is added to the mercury to establish the equilibrium tellurium atomic fraction in the melt at the growth temperature for the composition of interest. We have been using a growth temperature of 500~ and a tellurium fraction of 8-10%; this produces material with X values (X in Hgl_xCdxTe) in the range of 0.3-0.2. The ampul is then evacuated and sealed. Growth takes place within a tipping furnace equipped with a sodium heat pipe to ensure that the system is isothermal. The ampul is first annealed at the growth temperature to dissolve the Te into the liquid Hg. The furnace is then tipped 180 ~ thereby immersing the substrate in the melt which then saturates by dissolving some of the substrate. Growth is allowed to proceed for 60-70h. At the end of the growth cycle, the melt is tipped off the substrate. The furnace is then turned off and allowed to cool to below 360~ before removal of the ampul in order to avoid boiling the Hg melt which can spoil the layer surface quality. A schematic of this process is given in Fig. 2. Growth from a tellurium melt is similar except that the melt consists of the tellurium-rich liquid in equilibrium with the composition of interest. After growth is co...

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“…For LPE growth of MCT, bulk grown CdZnTe single crystal substrates are suitable, since they are thermodynamically compatible and nearly lattice matched. The solvent can either be Hg [21] or Te-rich [22].…”

Section: Liquid Phase Epitaxy (Lpe)mentioning

confidence: 99%

Advances in Infrared Detector Array Technology

Dhar¹,

Dat²,

Sood³

2013

Optoelectronics - Advanced Materials and Devices

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This Chapter covers recent advances in Short Wavelength Infrared (SWIR), Medium Wavelength Infrared (MWIR) and Long Wavelength Infrared (LWIR) materials and device technologies for a variety of defense and commercial applications. Infrared technology is critical for military and security applications, as well as increasingly being used in many commercial products such as medical diagnostics, drivers' enhanced vision, machine vision and a multitude of other applications, including consumer products. The key enablers of such infrared products are the detector materials and designs used to fabricate focal plane arrays (FPAs). Since the 1950s, there has been considerable progress towards the materials development and device design innovations. In particular, significant advances have been made during the past decade in the band-gap engineering of various compound semiconductors that has led to new and emerging detector architectures. Advances in optoelectronics related materials science, such as metamaterials and nanostructures, have opened doors for new approaches to apply device design methodologies, which are expected to offer enhanced performance and low cost products in a wide range of applications. This chapter reviews advancements in the mainstream detector technologies and presents different device architectures and discussions. The chapter introduces the basics of infrared detection physics and various infrared wavelength band characteristics. The subject is divided into individual infrared atmospheric transmission windows to address related materials, detector design and device performance. Advances in pixel scaling, junction formation, materials growth, and processing technologies are discussed. We discuss the SWIR band (1-3 microns) and address some of the recent advances in In-GaAs, SiGe and HgCdTe based technologies and their applications. We also discuss MWIR band that covers 3-5 microns, and its applications. Some of the key work discussed includes InSb, HgCdTe, and III-V based Strained Layer Super Lattice (SLS) and barrier detector tech

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Experimental determination of the mercury-rich corner of the Hg-Cd-Te phase diagram

Cited by 32 publications

References 13 publications

Mechanical and Thermal Properties

Mechanical and Thermal Properties

Isothermal Liquid Phase Epitaxial Growth of Mercury Cadmium Telluride

Advances in Infrared Detector Array Technology

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