Experimental determination of impact ionization coefficients in

Avalanche Photodiodes in High-Speed Receiver Systems

“…The measurement is made using a CW light source and a noise figure meter such as the Hewlett Packard 8970A. The system has two significant advantages over PSD systems such as those of Bulman (1983) and Li (Lau et al, 2006). Several measurement frequencies are available up to the limit of the circuits or analyser.…”

“…The Xie et al (1993) system represents both. Bulman (1983), Ando and Kanbe (1981) and Lau et al (2006) presented systems based on phase sensitive detection. Xie et al (1993) and Toivonen et al (1992) used a DC approach.…”

“…Xie et al (1993) and Toivonen et al (1992) used a DC approach. Figure 2 shows the system reported by Bulman (1983). It is a PSD system in which photocurrent and excess noise are extracted and read out by two lock in amplifiers.…”

Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in Gaas Mesfets

“…where N, , ' and N s i represent ionized densities of the deep donors and the deep acceptors, respectively. an and ap are ionization rates for electrons and holes, respectively, and are taken from [8]. Cn and Cp are the electron and hole capture coefficients of the deep levels, respectively, en and ep are the electron and hole emission rates of the deep levels, respectively, and the subscript (SD, SA) represents the corresponding deep level [I].…”

Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

“…To test this the multiplication within p-i-n APDs, with the same 135 nm intrinsic thickness as our thinnest device, was modelled using the impact ionisation coefficients reported for different III-V materials [11][12][13] . As shown in figure 5, the AlGaAsSb p-i-n APD displays an increased multiplication factor at all reverse biases, compared to GaAs, InP and Al0.8Ga0.2As.…”