Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

Abstract

We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kVcm -1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the midwave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.

3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode

“…The calculated V br is 10.2, 6.7 and 6 V at the nanowire doping concentration of 2 × 10 17 /cm 3 , 9 × 10 17 /cm 3 , 1.5 × 10 18 /cm 3 corresponding to the device peak electric field of 707 kV/cm, 985 kV/cm and 1.07 MV/cm respectively. The V br reduces with peak electric field and this lower operating voltage is due to the higher ionization coefficient rates at higher fields [26]. It is worth noting that high peak fields corresponding to 1.5 × 10 19 /cm 3 and 9 × 10 17 /cm 3 doping levels will generate band to band tunneling current densities [27] of 0.436 A/m 2 and 0.0515 A/m 2 respectively in GaAs based devices.…”

Avalanche multiplication and excess noise characteristics in antimony-based avalanche photodiodes

“…9a. For the three alloy compositions studied with x=0.4, 0.55, and 0.65, the β/α ratio was found to vary between 1.2 to 4 over the temperature range from 77 K to 300 K. More recently, Collins et al [28] investigated the ionization coefficients in a series of Al x Ga 1-x As y Sb 1-y p-i-n diodes with x = 0.9. Their results corroborated those of Grzesik et al [29], and their β/α is shown in Fig.…”

“…Figure 9. a) Avalanche multiplication of AlxGa1-xAsySb1-y on GaSb[28],[29],[27]. b) ionization coefficients of AlxGa1-xAsySb1-y on GaSb[28],[29],[27].…”