Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature

Li, Sai; Du, Ao; Wang, Yadong; Wang, Xinran; Zhang, Xueying; Cheng, Houyi; Cai, Wenlong; Lu, Shengfu; Cao, Kaihua; Pan, Biao; Lei, Na; Wang, Kang; Liu, Junming; Fert, A.; Hou, Zhipeng; Zhao, Weisheng

doi:10.1016/j.scib.2022.01.016

Cited by 64 publications

(46 citation statements)

References 49 publications

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“…We have also estimated the total energy consumption of ∼0.7 fJ by assuming a tunnel magnetoresistance (TMR) ratio of 100% and resistance in the order of 1KΩ. , Note that the energy consumption in the STT based logic operation is ∼0.1 pJ and the spin wave based logic is ∼0.001 fJ . The delay time is found to be 8–14 ns for our OR logic gate operation.…”

Section: Resultsmentioning

confidence: 99%

“…We have found that the skyrmions in the device can be annihilated by applying a critical current density of 1.4 × 10 11 A/m 2 . Finally, we would like to mention that nucleation and detection of the skyrmions can be achieved by placing magnetic tunnel junction (MTJ) ,− devices at the circular disk positions as shown in the schematic in Figure . For the proof of concept demonstration, we have shown the nucleation of skyrmions by injecting a spin polarized current locally at the input positions, and the results are summarized in Figure S9.…”

Section: Resultsmentioning

confidence: 99%

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Reconfigurable Logic Operations via Gate Controlled Skyrmion Motion in a Nanomagnetic Device

Paikaray

Kuchibhotla

Haldar

et al. 2022

ACS Appl. Electron. Mater.

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Owing to the topological protection and the ease of efficient manipulation, skyrmions have emerged as potential candidates for carrying information in future memory and logic devices. Here, we have proposed a reconfigurable skyrmion based two-input logic device architecture. Using micromagnetic simulations, we have demonstrated that the device is capable of performing both OR and AND logic gate functionalities in a reconfigurable manner. Different logic functionality of the device is selected by using a current through a nonmagnetic metallic gate, and the resultant Oersted field controls the trajectory of the skyrmion, which in turn determines the logic states. The logic functions are implemented on a ferromagnet/heavy metal bilayer device structure by virtue of several physical effects, such as the spin−orbit torque, skyrmion−edge repulsion, skyrmion−skyrmion topological repulsion, and skyrmion Hall effect. The skyrmion trajectory has been characterized by estimating the skyrmion Hall angle. A wide range of operations by varying the current density, skyrmion velocity, Dzyaloshinskii−Moriya interaction, magnetic anisotropy, and geometrical parameters have been presented in detail. We believe that our spin orbit torque driven logic design will have potential implications for a high-speed and low-power skyrmion based computing architecture.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Reconfigurable Logic Operations via Gate Controlled Skyrmion Motion in a Nanomagnetic Device

Paikaray

Kuchibhotla

Haldar

et al. 2022

ACS Appl. Electron. Mater.

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“…The quest for materials that host topologically protected nano-metric spin textures, so-called magnetic skyrmions or magnetic skyrmion bubbles, continues to be fueled by the promise of novel devices. 1 Skyrmionic spin textures have mostly been observed in noncentrosymmetric crystals, such as MnSi, 2,3 FeGe, 4 FeCoSi, 5 Cu 2 OSeO 3 , 6 GaV 4 S 8 , 7 Pt/Co/Ta 8–11 and Pt/Co/Ta/MgO/CoFeB/Mo, 12 where the Dzyaloshinskii–Moriya interaction (DMI) is active. 7 In addition to noncentrosymmetric chiral magnets in which magnetic skyrmions are stabilized by the DMI, centrosymmetric materials with uniaxial magnetic anisotropy (UMA) are another family of materials that can host skyrmions.…”

Section: Novel Physical Properties In Kagome Structurementioning

confidence: 99%

Progress in magnetic alloys with kagome structure: materials, fabrications and physical properties

Zhang

Hou

2022

J. Mater. Chem. C

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“…The currentinduced skyrmion motion in the nanotrack has been widely explored to design skyrmion-based racetrack memory [25,26], logic gates [27,28], and transistors [29,30] for von Neumann computing architecture. However, the rapid expansion of data volume has posed significant challenges to such computing systems in terms of their scalability and complexity [31]. To fix these issues, neuromorphic engineering acts as a viable and promising solution for the advancement of energy-efficient circuits and systems for specific tasks such as image and temporal pattern recognition.…”

Section: Introductionmentioning

confidence: 99%

Antiferromagnetic skyrmion based shape-configured leaky-integrate-fire neuron device

Bindal

Raj

Kaushik

2022

J. Phys. D: Appl. Phys.

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Spintronic devices based on antiferromagnetic skyrmion (AFM) motion on the nanotracks have gained significant interest as a key component of neuromorphic data processing systems. AFM skyrmions are favorable over the ferromagnetic skyrmions as they follow the straight trajectories and prevent its annihilation at the nanotrack edges. In this paper, the AFM skyrmion-based neuron device that exhibits the leaky-integrate-fire (LIF) functionality is proposed for the first time. It exploits the current-driven skyrmion dynamics on the shape-configured nanotracks that are linearly decreasing and exponentially decaying. The device structure creates the regions from lower to higher energy states for the AFM skyrmions during its motion from the wider to narrower region. This causes the repulsion force from the nanotrack edges to act on the AFM skyrmion thereby, drifting it in the backward direction in order to minimize the system energy. This provides the leaking functionality to the neuron device without any external stimuli and additional hardware cost. The average velocities during the integration and leaky processes are in the order of 103 and 102 m/sec, respectively for the linearly and exponentially tapered nanotracks. Moreover, the energy of the skyrmion is in the order 10-20 J. Hence, the suggested device opens up the path for the development of high-speed and energy-efficient devices in antiferromagnetic spintronics for neuromorphic computing.

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Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature

Cited by 64 publications

References 49 publications

Reconfigurable Logic Operations via Gate Controlled Skyrmion Motion in a Nanomagnetic Device

Reconfigurable Logic Operations via Gate Controlled Skyrmion Motion in a Nanomagnetic Device

Progress in magnetic alloys with kagome structure: materials, fabrications and physical properties

Antiferromagnetic skyrmion based shape-configured leaky-integrate-fire neuron device

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