Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO<sub>2</sub>/silicon technology

Sánchez, Luis; Olivares, Irene; Parra, Jorge; Menghini, Mariela; Homm, Pía; Locquet, Jean‐Pierre; Sanchís, Pablo

doi:10.1364/ol.43.003650

Cited by 18 publications

(16 citation statements)

References 43 publications

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“…Switching energies between 200 and 300 nJ and switching speeds around 3–4 µs were reported for this kind of heater‐based device. [ 91 ]…”

Section: Nonvolatile Switching Enabled By Materials Integrationmentioning

confidence: 99%

“…The interaction that exists between the optical mode and the VO 2 at both states leads to a change on the effective refractive index that translates in both an optical phase and optical loss variation that can be exploited for optical switching. Ultracompact (<20 µm) VO 2 /Si waveguides with large extinction ratios between the insulating and metallic state for TE (≈25 dB) and TM (>40 dB) polarization either using a straight waveguide [90,91] or in a Mach-Zehnder interferometer or microring resonator [92] have been demonstrated. On the other hand, competitive insertion loss below 0.05 dB µm −1 for TE polarization and 0.3 dB µm −1 for TM polarization has been achieved by engineering the morphology of the VO 2 layer.…”

Section: Vanadium Dioxidementioning

confidence: 99%

“…Switching energies between 200 and 300 nJ and switching speeds around 3-4 µs were reported for this kind of heater-based device. [91] However, the physics across the VO 2 phase transition is complex, and it has been the subject of intense research. Intermediate metastable states and interplayed electronic and structural material aspects are involved.…”

Section: Vanadium Dioxidementioning

confidence: 99%

See 2 more Smart Citations

Toward Nonvolatile Switching in Silicon Photonic Devices

Parra

Olivares

Brimont

et al. 2021

Laser & Photonics Reviews

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Nonvolatile switching is still a missing functionality in current mainstream silicon photonics complementary metal‐oxide‐semiconductor platforms. Fundamentally, nonvolatile switching stands for the ability to switch between two or more photonic states reversibly without needing additional energy to hold each state. Therefore, such a feature may push one step further the potential of silicon photonics by offering new ways of achieving photonic reconfigurability with ultrasmall energy consumption. Here, a detailed review of current developments that enable nonvolatile switching in silicon photonic waveguide devices is provided. Nonvolatility is successfully demonstrated either based on device engineering or by hybrid integration of silicon waveguides with materials exhibiting unique optical properties. Furthermore, several approaches with high potential for evolving toward a nonvolatile behavior with enhanced performance are also being explored. In most cases, many development steps are still necessary to ensure reliable devices. However, this research field is expected to progress in the coming years boosted by current and emerging applications benefiting from such functionality, such as new paradigms for photonic computing or advanced reconfigurable circuits for programmable photonic systems.

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“…Switching energies between 200 and 300 nJ and switching speeds around 3–4 µs were reported for this kind of heater‐based device. [ 91 ]…”

Section: Nonvolatile Switching Enabled By Materials Integrationmentioning

confidence: 99%

Section: Vanadium Dioxidementioning

confidence: 99%

Section: Vanadium Dioxidementioning

confidence: 99%

See 1 more Smart Citation

Toward Nonvolatile Switching in Silicon Photonic Devices

Parra

Olivares

Brimont

et al. 2021

Laser & Photonics Reviews

Self Cite

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“…Thus, its integration in the silicon photonics platform as an active layer seems to be very attractive for providing high-performance photonic devices. Although, some hybrid VO2/Si photonic devices have been demonstrated, these rely on microheaters to trigger the IMT [3,4] or on applying an electrical field [5,6]. Hence, the all-optical feasibility of integrated VO2 devices needs of further investigation.…”

Section: Introductionmentioning

confidence: 99%

Integrated all-optical VO₂/Si waveguide switch

Parra¹,

Angelova²,

Menghini

et al. 2020

2020 IEEE Photonics Conference (IPC)

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“…Another characteristic that makes VO 2 a promising tunable material is that the switching time is very fast when changing from a semiconductor property to a metal property. The study of VO 2 is mainly focused on two areas: the first design idea is changing the electrical length by exploiting the ultra-large change of the refractive index in VO 2 between the semiconductor and the metallic states [21][22][23], and the second design idea is changing the transverse electric and transverse magnetic pass with different phases [24,25]. However, these two ideas are still far from achieving full control over the electromagnetic wave.…”

Section: Introductionmentioning

confidence: 99%

Tunable Control of Mie Resonances Based on Hybrid VO2 and Dielectric Metamaterial

et al. 2018

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In this paper, a tunable dielectric metamaterial absorber with temperature-based vanadium dioxide (VO 2 ) is proposed. In contrast to previous studies, both the metal phase of VO 2 and the semiconductor phase are applied to manipulate the Mie resonant modes in the dielectric cubes. By embedding VO 2 in the main resonant structure, the control over Mie resonant modes in dielectric metamaterials is realized. Each resonant mode is analyzed through field distribution and explains why the phase switch of VO 2 could affect the absorbance spectrum. This use of tunable materials could create another new methodology for the manipulation of the Mie resonance-based dielectric cubes and make them closer in essence to isotropic metamaterials.Symmetry 2018, 10, 423 2 of 12 composite material functions as a sub-wavelength metamaterial with the tunable operating material phase permitting the realization of an absorber. Modeling and Design PrincipleThis study starts with the cross-shaped dielectric metamaterial absorption. For metamaterial or metasurface absorbers, one of the most important conditions is the exploitation of epsilon-near-zero (ENZ) materials [26]. A cross-shaped absorber was developed from the cube absorber [27]. By adding other components into the unit cell, ENZ materials can be obtained by the Mie resonances inside the cross-shaped structure.First, this study starts with the Mie resonance inside the dielectric cube. The incident wave excites different Mie resonant modes at different frequencies. As there are different application requirements, full control over the resonant modes is needed. Learning from the broadband antenna or left-handed metamaterial design, adding some other structures into the unit cell could manipulate the resonant modes by tuning the nearby resonances together. Based on previous experience with absorbers, the cross-shaped dielectric absorber could have three absorbance peaks corresponding to three resonant frequencies and resonant modes. At each resonant frequency, the incident energy is trapped in the center of the shape and both dielectric arms, on the basis of the electric wave. This multi-mode resonance structure has great advantages in wave control, and also makes it easier to accomplish different electromagnetic goals. Compared to the similar shapes [28,29], the cross-shaped absorber can also be regarded as a complementary dielectric cube absorber. Based on the equivalent circuit theory, the cross-shaped structure is smaller while keeping the same resonant performance. Additionally, the unit cell is composed of dielectric ceramics, which means low ohmic loss and a greater suitability for high-temperature and high-power conditions. Considering that temperature is one of the most important parameters in this study, it is necessary to keep the host unit cell shape and constitutive parameters stable while tuning the temperature. Therefore, the cross shape is the best candidate for the study of a hybrid VO 2 and dielectric metamaterial absorber.

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Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO₂/silicon technology

Cited by 18 publications

References 43 publications

Toward Nonvolatile Switching in Silicon Photonic Devices

Toward Nonvolatile Switching in Silicon Photonic Devices

Integrated all-optical VO₂/Si waveguide switch

Tunable Control of Mie Resonances Based on Hybrid VO2 and Dielectric Metamaterial

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Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO2/silicon technology

Cited by 18 publications

References 43 publications

Toward Nonvolatile Switching in Silicon Photonic Devices

Toward Nonvolatile Switching in Silicon Photonic Devices

Integrated all-optical VO2/Si waveguide switch

Tunable Control of Mie Resonances Based on Hybrid VO2 and Dielectric Metamaterial

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Product

Resources

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Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO₂/silicon technology

Integrated all-optical VO₂/Si waveguide switch