Experimental demonstration of a reconfigurable silicon thermo-optical device based on spectral tuning of ring resonators for optical signal processing

Fegadolli, William S.; Feng, Liang; Rahman, Muhammad Mujeeb-U; Oliveira, J.E.B.; Almeida, Vilson R.; Scherer, Axel

doi:10.1364/oe.22.003425

Cited by 18 publications

(7 citation statements)

References 28 publications

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“…As a result of the relatively large thermo-optic coefficient of silicon near 300 Kelvin and at wavelengths near 1550 nm, dn/dT = 1.86 × 10 −4 K −1 [7] where n is the refractive index and T is temperature in Kelvin, thermal effects have been successfully used to tune and stabilize ring resonators [8,9] and interferometric switches [10][11][12][13][14]. Yet, when considering, for example, the development of large-scale quantum photonic circuits based on reconfigurable quantum gates [15], previously demonstrated thermo-optic phase shifters are quite long (preventing dense intregration), have notable insertion loss, or are not implemented with a standard silicon dioxide cladding used in complementary metaloxide-semiconductor (CMOS) processes for passivation and metal layer fabrication, as shown in Table 1.…”

Section: Introductionmentioning

confidence: 99%

Efficient, compact and low loss thermo-optic phase shifter in silicon

Harris¹,

Ma²,

Mower³

et al. 2014

Opt. Express

319

186

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We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new ridge waveguide geometry. The resistance profile is engineered using different dopant concentrations to obtain localized heat generation and maximize the overlap between the optical mode and the high temperature regions of the structure, while simultaneously minimizing optical loss due to free-carrier absorption. A 61.6 µm long phase shifter was fabricated in a CMOS process with oxide cladding and two metal layers. The device features a phase-shifting efficiency of 24.77 ± 0.43 mW/π and a -3 dB modulation bandwidth of 130.0 ± 5.59 kHz; the insertion loss measured for 21 devices across an 8-inch wafer was only 0.23 ± 0.13 dB. Considering the prospect of densely integrated photonic circuits, we also quantify the separation necessary to isolate thermo-optic devices in the standard 220 nm SOI platform.

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Section: Introductionmentioning

confidence: 99%

Efficient, compact and low loss thermo-optic phase shifter in silicon

Harris¹,

Ma²,

Mower³

et al. 2014

Opt. Express

319

186

View full text Add to dashboard Cite

show abstract

“…Regarding the single-mode condition, one can choose w Si =600nm. The corresponding propagation losses are respectively ~0.005dB/μm and ~0.013dB/μm for TE-and TM-polarization modes, which are much smaller than that of previous graphene-silicon hybrid SOI nanowire [7][8]. This makes graphene-based transparent nano-heater available for thermally tuning silicon photonic integrated devices.…”

Section: Soi Nanowire With a Graphene Nano-heatermentioning

confidence: 90%

Utilization of thermal effects for silicon photonics

Dai

Chen

et al. 2015

SPIE Proceedings

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Thermal effect plays a key role and has been utilized for various photonic devices. For silicon photonics, the thermal effect is usually important because of the large thermo-optical coefficient of silicon material. This paper gives a review for the utilization of thermal effects for silicon photonics. First, the thermal effect is very beneficial to realize energy-efficient silicon photonic devices with tunability/switchability (including switches, variable optical attenuators, etc). Traditionally metal micro-heater sitting on a buried silicon-on-insulator (SOI) nanowire is used to introduce a phase shift for thermal tunability by injecting a electrical current. An effective way to improve the energy-efficiency of thermal tuning is reducing the volume of the optical waveguide as well as the micro-heater. Our recent work on silicon nanophotonic waveguides with novel nano-heaters based on metal wires as well as graphene ribbons will be summarized. Second, the thermal resistance effect of the metal strip on a hybrid plasmonic waveguide structure can be utilized to realize an ultra-small on-chip photodetector available for an ultra-broad band of wavelength, which will also be discussed.

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“…Optical component design relies on silicon-buried oxide-silicon-based structure under multilayer dielectric and metal structure [aka metal-insulator-metal (MIM) structure] of the SOI-CMOS process. This SOI structure can be used to realize silicon resonator structures for dense optical multiplexing 24 that can be used in biomedical applications, e.g., for multiplexing large-scale neural data.…”

Section: System Designmentioning

confidence: 99%

Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

Mujeeb-U-Rahman

Scherer

2016

J. Biomed. Opt

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Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications," J. Abstract. Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

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Experimental demonstration of a reconfigurable silicon thermo-optical device based on spectral tuning of ring resonators for optical signal processing

Cited by 18 publications

References 28 publications

Efficient, compact and low loss thermo-optic phase shifter in silicon

Efficient, compact and low loss thermo-optic phase shifter in silicon

Utilization of thermal effects for silicon photonics

Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

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