Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

Abstract

The demand for on-chip multifunctional optoelectronic systems is increasing in the Internet-of-Things era. Spectral emission–detection overlap endows an InGaN/GaN quantum well diode (QWD) with an intriguing capability to detect and modulate light emitted by itself, which is of great interest when merging electronics and photonics together on a single chip for the development of advanced information systems. When biased and illuminated at approximately the same time, the InGaN/GaN QWD can achieve light emission and detection simultaneously. Herein, we experimentally demonstrate the simultaneous emission–detection phenomenon and analyze the irreversibility of spectral emission–detection overlap according to energy diagram theory, which may answer why the QWD can only detect and modulate higher-energy photons than those emitted by itself.

Interface Engineering in Chip-Scale GaN Optical Devices for Near-Hysteresis-Free Hydraulic Pressure Sensing

“…It is known that the PD using the same InGaN/GaN MQW structure can respond to the LED radiation due to the overlap between their emission and absorption spectra. 36 As the sapphire substrate serves as a light-guiding component for coupling the emitted light from the LED to the PD, the photocurrent responses under various LED illuminations are measured and shown in Figure 2b. In the absence of LED emission, the measured current is in the order of magnitude of 10 −9 A.…”

“…From the current–voltage characteristic of the LED shown in Figure a, the forward voltage at 5 mA is determined to be 2.75 V. The figure inset reveals that the light output power increases linearly with the injection current. It is known that the PD using the same InGaN/GaN MQW structure can respond to the LED radiation due to the overlap between their emission and absorption spectra . As the sapphire substrate serves as a light-guiding component for coupling the emitted light from the LED to the PD, the photocurrent responses under various LED illuminations are measured and shown in Figure b.…”

Miniature viscometer incorporating GaN optical devices with an ultrawide measurement range

“…The GaN semiconductor and its alloys have been considered an ideal platform for developing light-emitting devices because of their high efficiency, long lifespan, and high physical stability 28,29 . Recently, other optical devices, such as detectors and waveguides, have been proposed for integration on the same GaN platform, and such applications as on-chip visible-light communication have been realized 30,31 . In this letter, the fabrication of a miniature viscometer by integrating an extremely small GaN optical device with a bendable strip, as schematically shown in Fig.…”

Multifunctional and Multicolor Perovskite-CdSe Quantum Dots Diodes for Pulse Oximetry

“…8,9 InGaN/GaN multiple-quantum-well (MQW)-based diodes have also been presented to perform selectable functionalities with emission and detection in the visible region. 10,11 With a double heterojunction design, the CdSe-based quantum dot (QD) light-emitting diode (LED) was shown with efficient photodetection and light emission within a single device. 12 A multifunctional optoelectronic device using an asymmetric active layer structure was also reported to be able to perform multiple functions.…”

“…Over the past few years, substantial efforts have been devoted to develop dual functional or multiple functional optoelectronic devices. , For example, perovskite diodes have been demonstrated with dual functionality of light emitting and light detecting, which were further applied in wearable LiFi communication and bidirectional optical transmission. , InGaN/GaN multiple-quantum-well (MQW)-based diodes have also been presented to perform selectable functionalities with emission and detection in the visible region. , With a double heterojunction design, the CdSe-based quantum dot (QD) light-emitting diode (LED) was shown with efficient photodetection and light emission within a single device . A multifunctional optoelectronic device using an asymmetric active layer structure was also reported to be able to perform multiple functions .…”