Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Abstract

Abstract-We have simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage ( -), capacitance-voltage ( -), -parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses.Index Terms-Power MOSFET, silicon-on-insulator (SOI) technology.

28V planar GaAs MESFETs for wireless base-station power amplifiers

“…For MESFETs with 0.3µm isolation depth, the measured gain and efficiency were much worse. Similar impact of pad capacitance on power performance was also observed in SOI LDMOS [13]. Notice that the parasitic pad capacitance can be reduced to negligible level either by using a semi-insulating substrate with p + implant to contact the p -buffer [11], or by using a deeper isolation implantation combined with a thick dielectric layer under the probe pads.…”

An analytical model for SOI triple RESURF devices

“…Silicon-on-insulator (SOl) technology appears to be particularly promising to power MOSFET in various applications from high voltage power devices to RF power amplifiers and low-power electronics, due to its numerous advantages over conventional bulk silicon technology, such as speed, isolation and density [1][2][3][4]. The REduced SURface Field (RESURF) principle [5] and Composite Buffer structure (CB) [6][7], also called superjunction [8], have been extended to SOl power devices to sustain high voltage.…”

Parameter extraction of SOILDMOS based on the HISIM-HV model

“…Also, when evaluated on the RF characteristics, SOILDMOS outperforms silicon MOSFET in the gain, linearity, switching performance, and so on. Because of its potential applications, SOLIDMOS has attracted great attention from research community and commercial organizations [1][2][3][4].…”