Experimental characterization of directional couplers in InP photonic membranes on silicon (IMOS)

Kaplan, Ali Emre; Bellanca, Gaetano; Engelen, Jorn P. van; Jiao, Yuqing; Tol, J.J.G.M. van der; Bassi, Paolo

doi:10.1364/osac.2.002844

Cited by 5 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The simulations related to the uncertainties on the peak frequency splitting due to parameters fluctuations (σ F Δω and σ F Δω,u) have been performed for different values of the relative uncertainties of the design parameters (σκ0/κ0 and σΔ/Δ, that for simplicity have been considered to be the same). The chosen values for these relative uncertainties of the design parameters (σκ0/κ0 and σΔ/Δ) have been chosen according to literature: the measurements in [34] suggest a worst-case approximation of the relative uncertainty of the coupling strength of an InP-based coupler lower than 1%, while the measurements in [35] suggest a worst-case approximation for the relative uncertainty of the resonance of a silicon resonator (proportional to the relative uncertainty of resonance half difference Δ) of 0,05%. Thus, we can conclude that the analyzed range of relative uncertainties of parameters (from 0.05% to 5%) in Fig.…”

Section: Numerical Simulationsmentioning

confidence: 99%

Anti-PT-Symmetric Optical Gyroscope at the Transmission Peak Degeneracy With Enhanced Signal-to-Noise Ratio

De Carlo,

De Leonardis,

Passaro

2024

J. Lightwave Technol.

View full text Add to dashboard Cite

Non-Hermitian sensors have been widely studied for the enhanced response of their eigenvalues in the proximity of exceptional points. However, it has been shown that noise is enhanced in the same way as sensitivity, thus vanishing the advantages of the exceptional point. Recently, the idea of measuring the frequency splitting of transmission peaks of a nonlasing PT-symmetric sensor has shown the possibility of increasing the signal-to-noise ratio of a sensor close to the so called "transmission peak degeneracy", with respect to an operating condition away from it.Here we analyze a non-Hermitian optical gyroscope, demonstrating that also anti-PT-symmetric Hamiltonians show an enhanced transmission peaks frequency splitting in the proximity of the transmission peak degeneracy. We also perform an analysis on noise and uncertainties and introduce new figures of merit to compare the proposed anti-PT-symmetric sensor with a classical resonant optical gyroscope. When the uncertainties due to fluctuations of parameters are negligible with respect to the uncertainties due to amplitude noise, the non-Hermitian sensor working at the transmission peak degeneracy is demonstrated to operate better than a classical resonant gyroscope in terms of signal-to-noise ratio.

show abstract

Section: Numerical Simulationsmentioning

confidence: 99%

Anti-PT-Symmetric Optical Gyroscope at the Transmission Peak Degeneracy With Enhanced Signal-to-Noise Ratio

De Carlo,

De Leonardis,

Passaro

2024

J. Lightwave Technol.

View full text Add to dashboard Cite

show abstract

“…The corner mirror offers a low loss, high optical bandwidth (>100 nm) and fabrication tolerant solution for low-footprint redirecting and decoupling of the optical signals. For instance, when used in the directional couplers, the corner-mirror bends ensured smaller footprint as well as reduced parasitic coupling as compared to arc bends [124].…”

Section: Bbs Portfoliomentioning

confidence: 99%

InP membrane integrated photonics research

Jiao

Nishiyama

Tol

et al. 2020

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Recently a novel photonic integration technology, based on a thin InP-based membrane, is emerging. This technology offers monolithic integration of active and passive functions in a sub-micron thick membrane. The enhanced optical confinement in the membrane results in ultracompact active and passive devices. The membrane also enables approaches to converge with electronics. It has shown high potential in breaking the speed, energy and density bottlenecks in conventional photonic integration technologies. This paper explains the concept of the InP membrane, discusses the versatility of various technology approaches and reviews the recent advancement in this field.

show abstract

“…It is well known that PIC performance is strongly dependent on the state of polarization of the optical signals. Integrated waveguides are intrinsically asymmetric and characterized by high birefringence, which is even more critical in high-index-contrast integrated platforms [ 9 , 10 , 11 ]. In addition, most of the active devices for signal processing and modulation need a specific input state of polarization of the signal.…”

Section: Introductionmentioning

confidence: 99%

Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires

et al. 2022

View full text Add to dashboard Cite

In this work, we show the design of a silicon photonic-based polarization converting device based on the integration of semiconduction InP nanowires on the silicon photonic platform. We present a comprehensive numerical analysis showing that full polarization conversion (from quasi-TE modes to quasi-TM modes, and vice versa) can be achieved in devices exhibiting small footprints (total device lengths below 20 µm) with minimal power loss (<2 dB). The approach described in this work can pave the way to the realization of complex and re-configurable photonic processors based on the manipulation of the state of polarization of guided light beams.

show abstract

Experimental characterization of directional couplers in InP photonic membranes on silicon (IMOS)

Cited by 5 publications

References 17 publications

Anti-PT-Symmetric Optical Gyroscope at the Transmission Peak Degeneracy With Enhanced Signal-to-Noise Ratio

Anti-PT-Symmetric Optical Gyroscope at the Transmission Peak Degeneracy With Enhanced Signal-to-Noise Ratio

InP membrane integrated photonics research

Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires

Contact Info

Product

Resources

About