Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC

Trap energetic and spatial localization in buried-gate 6H-SiC JFETs by means of numerical device simulation

“…The resulting waveform is "low-pass" like. After analysis of results from both DLTS measurements and device simulation, by comparison with data reported in the literature [8], [9], we can tentatively attribute traps to the following origin: i) eV is an Al-related hole trap; ii) eV is an unknown hole trap; eV is a process induced electron trap at the interface; eV is possibly a hole trap due to the interaction of Boron and native defects.…”

Static and Dynamic Effects of the Incomplete Ionization in Superjunction Devices

“…It is worth noting that the cross section can be also electric field and temperature dependent. In this paper, we considered a constant value of σA (1x10 -15 cm 2 ) for boron and nitrogen doped 4H-SiC, a mean value according to several DLTS measurements reported in [25,26]. Due to the very low value of the activation energy and the doping values adopted in this study, both the dynamic and static effects of the incomplete ionization on nitrogen doped 4H-SiC could be neglected.…”

Влияние частичной ионизации легирующих примесей в 4H-SiC на емкость обратносмещенного p-=SUP=-+-=/SUP=--i-n-=SUP=-+-=/SUP=--диода

“…Как проведенный упрощенный анализ, так и численное моделирование сделаны в предположении о том, что ионизация примесей происходит практически мгновенно (заложенная в современном пакете SILVACO TCAD физическая модель INCOMPLETE не учитывает динамику ионизации легирующих примесей). Однако время ионизации имеет конечную величину и может быть оценено из соотношения [5,6]…”