Experimental assessment of self-heating in SOI FinFETs

Scholten, A.J.; Smit, G.D.J.; Pijper, Ralf; Tiemeijer, L.F.; Tuinhout, H.P.; Steen, J.-L.P.J. van der; Mercha, A.; Braccioli, M.; Klaassen, D.B.M.

doi:10.1109/iedm.2009.5424362

Cited by 76 publications

(37 citation statements)

References 6 publications

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“…The same holds for bulk resistance because of the well-designed RF layout of the measured test structures. The shortest devices are subject to some moderate self-heating [32], but the associated temperature increase can account for at most ∼10% of the observed excess noise and was therefore neglected in the analysis.…”

Section: Experimental Results and Model Validationmentioning

confidence: 99%

RF-Noise Modeling in Advanced CMOS Technologies

Smit

Scholten

Pijper

et al. 2014

IEEE Trans. Electron Devices

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RF circuit design in deep-submicrometer CMOS technologies relies heavily on accurate modeling of thermal noise. Based on Nyquist's law, predictive modeling of thermal noise in MOSFETs was possible for a long time, provided that parasitic resistances and short-channel effects were properly accounted for. In sub-100-nm technologies, however, microscopic excess noise starts to play a significant role and its incorporation in thermal noise models is unavoidable. Here, we will review several crucial ingredients for accurate RF noise modeling, with emphasis on sub-100-nm technologies. In particular, a detailed derivation and discussion are presented of our microscopic excess noise model. It is shown to qualitatively explain the observed noise (across bias and geometry) in a wide range of commercially available sub-100-nm foundry processes. Besides, the impact of excess noise on the minimum noise figure is discussed.

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Section: Experimental Results and Model Validationmentioning

confidence: 99%

RF-Noise Modeling in Advanced CMOS Technologies

Smit

Scholten

Pijper

et al. 2014

IEEE Trans. Electron Devices

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“…This method has been proven to be a highly accurate and detailed characterization method for the SHE [8], [21], [22]. It is based on the fact that the ac output conductance shows a different behavior when the frequency is changed.…”

Section: Resultsmentioning

confidence: 99%

Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

Sodan

Oprins

Stoffels

et al. 2015

IEEE Trans. Electron Devices

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Thermal analysis of AlGaN/GaN high-electron mobility transistors on silicon has been performed with emphasis on the influence of the field-plate configuration on power dissipation and temperature profiles along a 2-D electron gas. The results highlight the importance of the field plates in power dissipation and show the difference between various field-plate configurations. Consequently, their design is important for a good thermal behavior and reliability of the transistors. By means of coupled technology computer aided design and finite element modeling simulations, a model is developed and used to characterize test structures in the saturation regime for power densities up to 12 W/mm. In addition, experiments are presented providing RF extraction of the ac output conductance and showing the influence of self-heating in a wide frequency range. In this way, the thermal resistance is extracted. The measured results are in good agreement with the electrothermal model.

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“…Although the GAA NWFET has been investigated in the stationary state a similar impact of self-heating and anharmonic phonon decay is expected in the transient regime of the transistor: 22 the time constants of the scattering processes are in effect orders of magnitude smaller than the usual clock frequency of integrated circuits (2-3 GHz). 6 The electron scattering rate due to phonon emission and absorption can be calculated as 1 s el ðEÞ $ 1 h R > ðEÞ À R < ðEÞ À Á and shows values around 10 to 100 THz.…”

mentioning

confidence: 97%