Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Vanhellemont, Jan; Lauwaert, Johan; Witecka, Agnieszka; Śpiewak, Piotr; Romandic, Igor; Clauws, Paul

doi:10.1016/j.physb.2009.08.121

Cited by 14 publications

(30 citation statements)

References 19 publications

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“…No evidence of I has been found in conventional self-diffusion experiments 16 . This is consistent with theoretical predictions that reveal a formation enthalpy of I being 1-2 eV higher than for V [17][18][19][20][21][22][23][24] . However, recent experiments on self-and dopant diffusion in Ge under proton irradiation indicate the dominance of I rather than of V [25][26][27][28][29] .…”

supporting

confidence: 91%

“…The thermal equilibrium concentration of V is approximated by C eq V /C 0 ≈ 2 × 10 2 exp (−1.97 eV /k B T ). This temperature dependence has been deduced by Vanhellemont et al 24 from resistivity changes measured after quenching of Ge from high temperatures. For the analysis the author considered isolated V to be responsible for the measured acceptor concentration.…”

Section: Modeling Diffusion Under Irradiationsupporting

confidence: 53%

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Radiation-enhanced self- and boron diffusion in germanium

et al. 2013

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We report experiments on proton irradiation enhanced self-and boron (B) diffusion in germanium (Ge) for temperatures between 515 • C and 720 • C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain concentrations of Ge interstitials and B-interstitial pairs that deviate by several orders of magnitude from their thermal equilibrium values. The dominance of self-interstitial related defects under irradiation leads to an enhanced self-and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI that are compared with recent results of atomistic calculations. The behavior of self-and B diffusion in Ge under concurrent annealing and irradiation is strongly affected by the property of the Ge surface to hinder the annihilation of self-interstitials. The limited annihilation efficiency of the Ge surface can be caused by donor-type surface states favored under vacuum annealing but the physical origin remains unsolved.

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supporting

confidence: 91%

Section: Modeling Diffusion Under Irradiationsupporting

confidence: 53%

Radiation-enhanced self- and boron diffusion in germanium

et al. 2013

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“…The origins of these defects may be vacancies, interstitials, impurities, or various vacancy complexes, among others. Table 1 shows a summary of the defects observed using the deep level transient spectroscopy (DLTS) technique [124][125][126][127][128][129][130][131][132][133][134][135][136]. Thus, elaborate control of the defect formation in the Ge LSI process is necessary because Ge-Ge bonds are weaker than those in the conventional Si case.…”

Section: Defect Properties Of Ge 1−x Sn Xmentioning

confidence: 99%

“…Although clear physical origins of these inadequate performances have not been clarified yet, the inadequate quality of the gate stack structures attributed to the Sn migration, as discussed in section 4, could be one of the reasons for this performance. However, comparative studies of the effective mobilities of [136]. a: alpha, p: proton, e: electron, γ: gamma-ray, n: neutron, SD: sputter deposition, EBD: electron beam deposition.…”

Section: Electronic Device Applicationsmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

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“…[2][3][4][5] Previous experiments generally established that quenching introduces acceptor-like defects in Ge. [2][3][4][5][6][7][8][9][10] These have been attributed to vacancy related defects [2,6,[11][12][13], but also transition metal (TM) contamination has been suggested to play an important role in the formation of quenched-in acceptors. [6,10,11,[14][15][16] In particular, Cu is known to have a high solubility and diffusivity in germanium at elevated temperatures (> 500…”

Section: Introductionmentioning

confidence: 99%

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Segers¹,

Lauwaert²,

Clauws³

et al. 2014

Semicond. Sci. Technol.

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Quenching experiments have been performed on both n-and p-type Ge in a dedicated furnace using infrared lamp heating. The capture and emission characteristics of the induced deep-level defects in the quenched samples were investigated by means of Deep Level Transient Spectroscopy. For all defect levels, a high impact of capture in the transition region (slow capture) was found. An empirical approach to analyse this effect is presented, which allows to extract reliable capture crosssection parameters. The defect parameters thus obtained were compared with previously published data and it was found that some prominent quenching-induced deep levels are related to metal impurities (Cu and Ni), while others may be vacancy-related.

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Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Cited by 14 publications

References 19 publications

Radiation-enhanced self- and boron diffusion in germanium

Radiation-enhanced self- and boron diffusion in germanium

Growth and applications of GeSn-related group-IV semiconductor materials

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

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