Experimental and theoretical studies of Si–CN bonds to eliminate interface states at Si/SiO2 interface

Dominant aim of the contribution is focused on investigation of very thin SiO 2 /a-Si:H interface properties. After PECVD deposition, surface of a-Si:H is not covered by reproducibly defined insulating layer. Therefore, three basic types of oxygen plasma sources were used for treatments of a-Si:H surfaces. Electrically well defined SiO 2 very thin film layers are formed by (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation, (ii) RF plasma as the source of positive oxygen ions for plasma immersion ion implantation process, and (iii) dielectric barrier discharge ignited at high pressures. In addition, chemical oxidation of a-Si:H surface was performed in boiling azeotropic HNO 3 solutions. Electrical properties of SiO 2 / semiconductor interface of both a-Si:H-and Si-based structures were improved by treatments in KCN and/or HCN solutions. Positive passivation influence of last mentioned solutions is presented on p-i-n a-Si-H solar cell parameters.

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“…In order to observe the interface states distribution in the Si band gap, electrical techniques such as capacitancevoltage (C − V ) [10][11][12] and conductance-voltage (G − V ) [10,13] measurements are usually employed. Using the electrical technique, the interface states are observable only in the limited energy region because deep interface states possess too large time constants to respond to an ac signal [6]; on the other hand, it is difficult to apply the electrical techniques to the ultrathin oxide layers because a tunneling current flows through the oxide layers [14,15].…”

Section: Introductionmentioning

confidence: 99%

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

et al. 2010

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Abstract:A set of MOS structures with thin SiO 2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U − V G curves). By comparing the A-DLTS spectra, U − V G characteristics and some electrical measurements (G − V , I − V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

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Experimental and theoretical studies of Si–CN bonds to eliminate interface states at Si/SiO2 interface

Cited by 36 publications

References 30 publications

Reaction of cyanide ions with copper on Si surfaces and its use for Si cleaning

Reaction of cyanide ions with copper on Si surfaces and its use for Si cleaning

Passivation of a-Si:H-based structures in KCN and HCN solutions and its application on p-i-n solar cell

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

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